夁嫀偺榑暥儕僗僩偼偙偪傜
2015
Appl. Phys. Express, Vol. 8, No. 1, 2015, pp. 015503-1-4.
Jpn. J. Appl. Phys., Vol. 54, No. 4, 2015, pp. 041102-1-6.
J. Cryst. Growth, Vol. 422, 2015, pp. 15-19.
Appl. Phys. Express, Vol. 8, No. 6, 2015, pp. 061003-1-3.
Semicond. Sci. Technol., Vol. 31, No. 3, 2016, pp. 034001 1-11.
Jpn. J. Appl. Phys., Vol. 55, No. 5S, 2016, pp. 05FA01 1-4.
Jpn. J. Appl. Phys., Vol. 55, No. 5S, 2016, pp. 05FF01 1-4.
Phys. Rev. B, Vol. 93, Issue 12, 2016, pp. 125209 1-18.
Appl. Phys. Lett., Vol. 108, Issue 13, 2016, pp. 133503 1-5.
J. Cryst. Growth, Vol. 446, 2016, pp. 33-38.
J. Cryst. Growth, Vol. 456, 2016, pp. 140-144.
J. Cryst. Growth, Vol. 456, 2016, pp. 145-150.
Jpn. J. Appl. Phys., Vol. 55, No. 12, 2016, pp. 1202A1 1-7.
Jpn. J. Appl. Phys., Vol. 55, No. 12, 2016, pp. 1202B3 1-5.
Jpn. J. Appl. Phys., Vol. 55, No. 12, 2016, pp. 1202BE 1-6.
J. Appl. Phys., Vol. 120, 2016, pp. 235703 1-8.
Appl. Phys. Lett., Vol. 110, Issue 10, 2017, pp. 103506 1-4.
Jpn. J. Appl. Phys., Vol. 56, No. 7, 2017, pp. 070304 1-4.
Jpn. J. Appl. Phys., Vol. 56, No. 7, 2017, pp. 078003 1-3.
J. Phys. D: Appl. Phys., Vol. 50, No. 33, 2017, pp. 333002 1-12.
Jpn. J. Appl. Phys., Vol. 56, No. 11, 2017, pp. 110310 1-3.
Phys. Rev. B, Vol. 96, Issue 24, 2017, pp. 245205 1-14.
Appl. Phys. Lett., Vol. 112, Issue 1, 2018, pp. 012103 1-5.
J. Cryst. Growth, Vol. 492, 2018, pp. 39-44.
J. Appl. Phys., Vol. 123, 2018, pp. 185107 1-7.
Appl. Phys. Express, Vol. 11, No. 6, 2018, pp. 064102 1-5.
Appl. Phys. Express, Vol. 11, No. 7, 2018, pp. 071001 1-3.
J. Cryst. Growth, Vol. 502, 2018, pp. 7-13.
Appl. Phys. Lett., Vol. 113, Issue 10, 2018, pp. 102103 1-5.
Thin Solid Films, Vol. 666, 2018, pp. 182-184.
IEEE Electron Device Letters, Vol. 40, No. 3, 2019, pp. 431-434.
Jpn. J. Appl. Phys., Vol. 58, No. SC, 2019, pp. SCCD17 1-4.
IEEE Electron Device Letters, Vol. 40, No. 9, 2019, pp. 1487-1490.
Microelectronics Reliability, Vol. 100-101, 2019, pp. 113453 1-4.
IEEE Electron Device Letters, Vol. 41, No. 2, 2020, pp. 296-299.
Phys. Stat. Sol. (b), Vol. 257, No. 4, 2020, pp. 1900564 1-5.
J. Phys. Soc. Jpn., Vol. 89, No. 3, 2020, pp. 036001 1-2.
J. Cryst. Growth, Vol. 539, 2020, pp. 125643 1-6.
J. Cryst. Growth, Vol. 540, 2020, pp. 125644 1-5.
J. Cryst. Growth, Vol. 545, 2020, pp. 125730 1-6.
Appl. Phys. Lett., Vol. 117, Issue 3, 2020, pp. 032101 1-5.
Appl. Phys. Lett., Vol. 117, Issue 22, 2020, pp. 222101 1-5.
Phys. Stat. Sol. (a), Vol. 217, Issue 24, 2020, pp. 2000465 1-7.
Appl. Phys. Lett., Vol. 117, Issue 24, 2020, pp. 243505 1-7.
Appl. Phys. Lett., Vol. 118, Issue 1, 2021, pp. 012102 1-6.
Appl. Phys. Lett., Vol. 118, Issue 4, 2021, pp. 042101 1-5.
Appl. Phys. Lett., Vol. 118, Issue 7, 2021, pp. 072104 1-5.
J. Cryst. Growth, Vol. 563, 2021, pp. 126111 1-6.
Jpn. J. Appl. Phys., Vol. 60, No. 4, 2021, pp. 045505 1-8.
J. Cryst. Growth, Vol. 575, 2021, pp. 126338 1-7.
Jpn. J. Appl. Phys., Vol. 60, No. 12, 2021, pp. 125506 1-6.
J. Cryst. Growth, Vol. 582, 2022, pp. 126520 1-5.
and Yoshinao Kumagai*,
Appl. Phys. Lett., Vol. 120, Issue 10, 2022, pp. 102102 1-6.
Appl. Phys. Express, Vol. 15, No. 5, 2022, pp. 054001 1-3.
Appl. Phys. Express, Vol. 15, No. 11, 2022, pp. 115501 1-4.
Jpn. J. Appl. Phys., Vol. 62, No. 1, 2023, pp. 015501 1-6.
Takashi Fujii, Ken Goto, Yoshinao Kumagai, and Makoto Nakajima*,
Jpn. J. Appl. Phys., Vol. 62 No. SF, 2023, pp. SF1011 1-6.
Tomoyuki Tanikawa*, and Ryuji Katayama,
Jpn. J. Appl. Phys., Vol. 62, No. SF, 2023, pp. SF1015 1-7.
Masato Ishikawa, Yoshihiko Takinami, Hideaki Machida, and Yoshinao Kumagai*,
Jpn. J. Appl. Phys., Vol. 62, No. SF, 2023, pp. SF1019 1-6.
Yoshinao Kumagai, Shizuo Fujita, and Tomohiro Yamaguchi,
Jpn. J. Appl. Phys., Vol. 62, No. SF, 2023, pp. SF1023 1-4.
Jpn. J. Appl. Phys., Vol. 62, No. 5, 2023, pp. 055503 1-8.
Kazutada Ikenaga, Yoshihiko Takinami, Hideaki Machida, and Yoshinao Kumagai*,
J. Vac. Sci. Technol. A, Vol. 41, No. 4, 2023, pp. 042704 1-9.
AIP Advances, Vol. 13, No. 8, 2023, pp. 085221 1-8.
Kazutada Ikenaga, Ken Goto, Yuzaburo Ban, and Yoshinao Kumagai*
Appl. Phys. Express, Vol. 16, No. 9, 2023, pp. 095504 1-5.
1)
Homoepitaxial growth of 兝-Ga2O3 layers by halide vapor phase epitaxy,
Hisashi Murakami, Kazushiro Nomura, Ken Goto, Kohei Sasaki, Katsuaki Kawara, Quang Tu Thieu, Rie Togashi,
Yoshinao Kumagai, Masataka Higashiwaki, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, and Akinori Koukitu,Appl. Phys. Express, Vol. 8, No. 1, 2015, pp. 015503-1-4.
2)
Thermal stability of 兝-Ga2O3 in mixed flows of H2 and N2,
Rie Togashi, Kazushiro Nomura, Chihiro Eguchi, Takahiro Fukizawa, Ken Goto, Quang Tu Thieu, Hisashi Murakami,
Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, and Akinori Koukitu,Jpn. J. Appl. Phys., Vol. 54, No. 4, 2015, pp. 041102-1-6.
3)
High rate InN growth by two-step precursor generation hydride vapor phase epitaxy,
Rie Togashi, Quang Tu Thieu, Hisashi Murakami, Yoshinao Kumagai, Yoshihiro Ishitani, Bo Monemar, Akinori Koukitu,J. Cryst. Growth, Vol. 422, 2015, pp. 15-19.
4)
Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy,
Toru Kinoshita, Toru Nagashima, Toshiyuki Obata, Shinya Takashima, Reo Yamamoto, Rie Togashi, Yoshinao Kumagai,
Raoul Schlesser, Ramón Collazo, Akinori Koukitu, and Zlatko Sitar,Appl. Phys. Express, Vol. 8, No. 6, 2015, pp. 061003-1-3.
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2016
5)
Recent progress in Ga2O3 power devices,
Masataka Higashiwaki, Kohei Sasaki, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu, Akito Kuramata, Takekazu Masui and Shigenobu Yamakoshi,Semicond. Sci. Technol., Vol. 31, No. 3, 2016, pp. 034001 1-11.
6)
Investigation of NH3 input partial pressure for N-polarity InGaN growth on GaN substrates by tri-halide vapor phase epitaxy,
Takahide Hirasaki, Tomoyasu Hasegawa, Misaki Meguro, Quang Tu Thieu, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, and Akinori Koukitu,Jpn. J. Appl. Phys., Vol. 55, No. 5S, 2016, pp. 05FA01 1-4.
7)
Formation mechanism of AlN whiskers on sapphire surfaces heat-treated in a mixed flow of H2 and N2,
Kazuya Takada, Kazushiro Nomura, Rie Togashi, Hisashi Murakami, Akinori Koukitu, and Yoshinao Kumagai,Jpn. J. Appl. Phys., Vol. 55, No. 5S, 2016, pp. 05FF01 1-4.
8)
Anisotropy, phonon modes, and free charge carrier parameters in monoclinic 兝-gallium oxide single crystals,
M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki,Phys. Rev. B, Vol. 93, Issue 12, 2016, pp. 125209 1-18.
9)
Temperature-dependent capacitance-voltage and current-voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n-Ga2O3 drift layers grown by halide vapor phase epitaxy,
Masataka Higashiwaki, Keita Konishi, Kohei Sasaki, Ken Goto, Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu, Akito Kuramata, and Shigenobu Yamakoshi,Appl. Phys. Lett., Vol. 108, Issue 13, 2016, pp. 133503 1-5.
10)
Influence of high-temperature processing on the surface properties of bulk AlN substrates,
Shunsuke Tojo, Reo Yamamoto, Ryohei Tanaka, Quang Tu Thieu, Rie Togashi, Toru Nagashima, Toru Kinoshita, Rafael Dalmau, Raoul Schlesser, Hisashi Murakami, Ramón Collazo, Akinori Koukitu, Bo Monemar, Zlatko Sitar, Yoshinao Kumagai,J. Cryst. Growth, Vol. 446, 2016, pp. 33-38.
11)
Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor,
Hisashi Murakami, Nao Takekawa, Anna Shiono, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Koh Matsumoto, Akinori Koukitu,J. Cryst. Growth, Vol. 456, 2016, pp. 140-144.
12)
Growth of thick and high crystalline quality InGaN layers on GaN (000-1) substrate using tri-halide vapor phase epitaxy,
Takahide Hirasaki, Martin Eriksson, Quang Tu Thieu, Fredrik Karlsson, Hisashi Murakami*, Yoshinao Kumagai, Bo Monemar, Per Olof Holtz, Akinori Koukitu,J. Cryst. Growth, Vol. 456, 2016, pp. 145-150.
13)
Current status of Ga2O3 power devices,
Masataka Higashiwaki, Hisashi Murakami, Yoshinao Kumagai, and Akito Kuramata,Jpn. J. Appl. Phys., Vol. 55, No. 12, 2016, pp. 1202A1 1-7.
14)
High rate growth of In2O3 at 1000 亱C by halide vapor phase epitaxy,
Rie Togashi, Shiyu Numata, Mayuko Hayashida, Takayuki Suga, Ken Goto, Akito Kuramata, Shigenobu Yamakoshi, Plamen Paskov, Bo Monemar, and Yoshinao Kumagai,Jpn. J. Appl. Phys., Vol. 55, No. 12, 2016, pp. 1202B3 1-5.
15)
Thermal and chemical stabilities of group-III sesquioxides in a flow of either N2 or H2,
Rie Togashi, Shiyu Numata, Mayuko Hayashida, Takayuki Suga, Ken Goto, Akito Kuramata, Shigenobu Yamakoshi, Plamen Paskov, Bo Monemar, and Yoshinao Kumagai,Jpn. J. Appl. Phys., Vol. 55, No. 12, 2016, pp. 1202BE 1-6.
16)
Electronic properties of the residual donor in unintentionally doped 兝-Ga2O3,
N. T. Son, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, A. Kuramata, M. Higashiwaki, A. Koukitu, S. Yamakoshi, B. Monemar, and E. Janzén,J. Appl. Phys., Vol. 120, 2016, pp. 235703 1-8.
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2017
17)
1-kV vertical Ga2O3 field-plated Schottky barrier diodes,
Keita Konishi, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi, and Masataka Higashiwaki,Appl. Phys. Lett., Vol. 110, Issue 10, 2017, pp. 103506 1-4.
18)
Thermodynamic analysis of (0001) and (000-1) GaN metalorganic vapor phase epitaxy,
Akira Kusaba, Yoshihiro Kangawa, Pawel Kempisty, Hubert Valencia, Kenji Shiraishi, Yoshinao Kumagai, Koichi Kakimoto, and Akinori Koukitu,Jpn. J. Appl. Phys., Vol. 56, No. 7, 2017, pp. 070304 1-4.
19)
Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth,
Yuya Inatomi, Yoshihiro Kangawa, Tomonori Ito, Tadeusz Suski, Yoshinao Kumagai, Koichi Kakimoto, and Akinori Koukitu,Jpn. J. Appl. Phys., Vol. 56, No. 7, 2017, pp. 078003 1-3.
20)
State-of-the-art technologies of gallium oxide power devices,
Masataka Higashiwaki, Akito Kuramata, Hisashi Murakami, and Yoshinao Kumagai,J. Phys. D: Appl. Phys., Vol. 50, No. 33, 2017, pp. 333002 1-12.
21)
Preparation of 2-in.-diameter (001) 兝-Ga2O3 homoepitaxial wafers by halide vapor phase epitaxy,
Quang Tu Thieu, Daiki Wakimoto, Yuki Koishikawa, Kohei Sasaki, Ken Goto, Keita Konishi, Hisashi Murakami, Akito Kuramata, Yoshinao Kumagai, and Shigenobu Yamakoshi,Jpn. J. Appl. Phys., Vol. 56, No. 11, 2017, pp. 110310 1-3.
22)
Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic 兝-Ga2O3,
Alyssa Mock, Rafał Korlacki, Chad Briley, Vanya Darakchieva, Bo Monemar, Yoshinao Kumagai, Ken Goto, Masataka Higashiwaki, and Mathias Schubert,Phys. Rev. B, Vol. 96, Issue 24, 2017, pp. 245205 1-14.
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2018
23)
Electron effective mass in Sn-doped monoclinic single crystal 兝-gallium oxide determined by mid-infrared optical Hall effect,
Sean Knight, Alyssa Mock, Rafał Korlacki, Vanya Darakchieva, Bo Monemar, Yoshinao Kumagai, Ken Goto, Masataka Higashiwaki, and Mathias Schubert,Appl. Phys. Lett., Vol. 112, Issue 1, 2018, pp. 012103 1-5.
24)
Comparison of O2 and H2O as oxygen source for homoepitaxial growth of 兝-Ga2O3 layers by halide vapor phase epitaxy,
Keita Konishi, Ken Goto, Rie Togashi, Hisashi Murakami, Masataka Higashiwaki, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, Yoshinao Kumagai,J. Cryst. Growth, Vol. 492, 2018, pp. 39-44.
25)
The influence of point defects on the thermal conductivity of AlN crystals,
Robert Rounds, Biplab Sarkar, Dorian Alden, Qiang Guo, Andrew Klump, Carsten Hartmann, Toru Nagashima, Ronny Kirste, Alexander Franke, Matthias Bickermann, Yoshinao Kumagai, Zlatko Sitar, and Ramón Collazo,J. Appl. Phys., Vol. 123, 2018, pp. 185107 1-7.
26)
All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer,
Man Hoi Wong, Ken Goto, Yoji Morikawa, Akito Kuramata, Shigenobu Yamakoshi, Hisashi Murakami, Yoshinao Kumagai, and Masataka Higashiwaki,Appl. Phys. Express, Vol. 11, No. 6, 2018, pp. 064102 1-5.
27)
Thermal conductivity of single-crystalline AlN,
Robert Rounds, Biplab Sarkar, Andrew Klump, Carsten Hartmann, Toru Nagashima, Ronny Kirste, Alexander Franke, Matthias Bickermann, Yoshinao Kumagai, Zlatko Sitar, and Ramón Collazo,Appl. Phys. Express, Vol. 11, No. 7, 2018, pp. 071001 1-3.
28)
Growth temperatures and the excess chlorine effect of N-polar GaN growth via tri-halide vapor phase epitaxy,
Nao Takekawa, Naoto Hayashida, Daisuke Ohzeki, Akira Yamaguchi, Hisashi Murakami*, Yoshinao Kumagai, Koh Matsumoto, Akinori Koukitu,J. Cryst. Growth, Vol. 502, 2018, pp. 7-13.
29)
Acceptor doping of 兝-Ga2O3 by Mg and N ion implantations,
Man Hoi Wong, Chia-Hung Lin, Akito Kuramata, Shigenobu Yamakoshi, Hisashi Murakami, Yoshinao Kumagai, and Masataka Higashiwaki,Appl. Phys. Lett., Vol. 113, Issue 10, 2018, pp. 102103 1-5.
30)
Halide vapor phase epitaxy of Si doped 兝-Ga2O3 and its electrical properties,
Ken Goto, Keita Konishi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Masataka Higashiwaki, Akito Kuramata, Shigenobu Yamakoshi,Thin Solid Films, Vol. 666, 2018, pp. 182-184.
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2019
31)
Current Aperture Vertical 兝-Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping,
Man Hoi Wong, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, and Masataka Higashiwaki,IEEE Electron Device Letters, Vol. 40, No. 3, 2019, pp. 431-434.
32)
Dependence of thermal stability of GaN on substrate orientation and off-cut,
Kento Yoshida, Sakiko Yamanobe, Keita Konishi, Shinya Takashima, Masaharu Edo, Bo Monemar, and Yoshinao Kumagai,Jpn. J. Appl. Phys., Vol. 58, No. SC, 2019, pp. SCCD17 1-4.
33)
Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation,
Chia-Hung Lin, Yohei Yuda, Man Hoi Wong, Mayuko Sato, Nao Takekawa, Keita Konishi, Tatsuro Watahiki, Mikio Yamamuka, Hisashi Murakami, Yoshinao Kumagai, and Masataka Higashiwaki,IEEE Electron Device Letters, Vol. 40, No. 9, 2019, pp. 1487-1490.
34)
Stability and degradation of isolation and surface in Ga2O3 devices,
C. De Santi, A. Nardo, M.H. Wong, K. Goto, A. Kuramata, S. Yamakoshi, H. Murakami, Y. Kumagai, M. Higashiwaki, G. Meneghesso, E. Zanoni, M. Meneghini,Microelectronics Reliability, Vol. 100-101, 2019, pp. 113453 1-4.
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2020
35)
Enhancement-Mode 兝-Ga2O3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker,
Man Hoi Wong, Hisashi Murakami, Yoshinao Kumagai, and Masataka Higashiwaki,IEEE Electron Device Letters, Vol. 41, No. 2, 2020, pp. 296-299.
36)
Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor-Phase Epitaxy,
Akira Yamaguchi*, Daisuke Oozeki, Naoya Kawamoto, Nao Takekawa, Mayank Bulsara, Hisashi Murakami, Yoshinao Kumagai, Koh Matsumoto, and Akinori Koukitu,Phys. Stat. Sol. (b), Vol. 257, No. 4, 2020, pp. 1900564 1-5.
37)
Comment on 乬Characteristics of Multi-photon Absorption in a 兝-Ga2O3 Single Crystal乭
[J. Phys. Soc. Jpn. 88, 113701 (2019)],
Rafal Korlacki*, Alyssa Mock, Chad Briley, Vanya Darakchieva, Bo Monemar, Yoshinao Kumagai, Ken Goto, Masataka Higashiwaki, and Mathias Schubert,[J. Phys. Soc. Jpn. 88, 113701 (2019)],
J. Phys. Soc. Jpn., Vol. 89, No. 3, 2020, pp. 036001 1-2.
38)
Lattice bow in thick, homoepitaxial GaN layers for vertical power devices,
Qiang Liu*, Naoki Fujimoto, Jian Shen, Shugo Nitta, Atsushi Tanaka, Yoshio Honda, Zlatko Sitar, Michał Boćkowski, Yoshinao Kumagai, Hiroshi Amano,J. Cryst. Growth, Vol. 539, 2020, pp. 125643 1-6.
39)
Homoepitaxial growth of AlN on a 2-in.-diameter AlN single crystal substrate by hydride vapor phase epitaxy,
Toru Nagashima*, Reiko Ishikawa, Tatsuya Hitomi, Reo Yamamoto, Junji Kotani, Yoshinao Kumagai,J. Cryst. Growth, Vol. 540, 2020, pp. 125644 1-5.
40)
Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas,
Reo Yamamoto, Nao Takekawa, Ken Goto, Toru Nagashima, Rafael Dalmau, Raoul Schlesser, Hisashi Murakami, Ramón Collazo, Bo Monemar, Zlatko Sitar, Yoshinao Kumagai*,J. Cryst. Growth, Vol. 545, 2020, pp. 125730 1-6.
41)
Electron paramagnetic resonance and theoretical study of gallium vacancy in 兝-Ga2O3,
Nguyen Tien Son, Quoc Duy Ho, Ken Goto, Hiroshi Abe, Takeshi Ohshima, Bo Monemar, Yoshinao Kumagai, Thomas Frauenheim, and Peter Deák,Appl. Phys. Lett., Vol. 117, Issue 3, 2020, pp. 032101 1-5.
42)
Temperature dependence of Ga2O3 growth by halide vapor phase epitaxy on sapphire and 兝-Ga2O3 substrates,
Ken Goto, Hidetoshi Nakahata, Hisashi Murakami, and Yoshinao Kumagai,Appl. Phys. Lett., Vol. 117, Issue 22, 2020, pp. 222101 1-5.
43)
Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers,
Ken Goto*, Nao Takekawa, Toru Nagashima, Reo Yamamoto, Galia Pozina, Rafael Dalmau, Raoul Schlesser, Ramón Collazo, Bo Monemar, Zlatko Sitar, Michał Boćkowski, and Yoshinao Kumagai,Phys. Stat. Sol. (a), Vol. 217, Issue 24, 2020, pp. 2000465 1-7.
44)
Characterization of trap states in buried nitrogen-implanted 兝-Ga2O3,
Abhishek Mishra, Taylor Moule, Michael J Uren, Man Hoi Wong, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki, and Martin Kuball*,Appl. Phys. Lett., Vol. 117, Issue 24, 2020, pp. 243505 1-7.
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2021
45)
Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical 兝-Ga2O3 MOSFETs,
Man Hoi Wong*, Hisashi Murakami, Yoshinao Kumagai, and Masataka Higashiwaki*,Appl. Phys. Lett., Vol. 118, Issue 1, 2021, pp. 012102 1-6.
46)
Anisotropic complex refractive index of 兝-Ga2O3 bulk and epilayer evaluated by terahertz time-domain spectroscopy,
Verdad C. Agulto, Kazuhiro Toya, Thanh Nhat Khoa Phan, Valynn Katrine Mag-usara, Jiajun Li, Melvin John F. Empizo, Toshiyuki Iwamoto, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Nobuhiko Sarukura, Masashi Yoshimura, and Makoto Nakajima*,Appl. Phys. Lett., Vol. 118, Issue 4, 2021, pp. 042101 1-5.
47)
Split Ga vacancies in n-type and semi-insulating 兝-Ga2O3 single crystals,
A. Karjalainen*, I. Makkonen, J. Etula, K. Goto, H. Murakami, Y. Kumagai, and F. Tuomisto,Appl. Phys. Lett., Vol. 118, Issue 7, 2021, pp. 072104 1-5.
48)
Investigation of halide vapor phase epitaxy of In2O3 on sapphire (0001) substrates,
Hidetoshi Nakahata, Rie Togashi, Ken Goto, Bo Monemar, Yoshinao Kumagai*,J. Cryst. Growth, Vol. 563, 2021, pp. 126111 1-6.
49)
Thermodynamic and experimental studies of 兝-Ga2O3 growth by metalorganic vapor phase epitaxy,
Ken Goto*, Kazutada Ikenaga, Nami Tanaka, Masato Ishikawa, Hideaki Machida, and Yoshinao Kumagai*,Jpn. J. Appl. Phys., Vol. 60, No. 4, 2021, pp. 045505 1-8.
50)
Investigation of etching characteristics of HVPE-grown c-In2O3 layers by hydrogen-environment anisotropic thermal etching,
Rie Togashi*, Ryo Kasaba, Ken Goto, Yoshinao Kumagai, Akihiko Kikuchi,J. Cryst. Growth, Vol. 575, 2021, pp. 126338 1-7.
51)
Growth of twin-free cubic In2O3(111) thick layers on c-plane sapphire substrates by halide vapor phase epitaxy,
Ken Goto*, Akane Mori, Hidetoshi Nakahata, Rie Togashi, and Yoshinao Kumagai*,Jpn. J. Appl. Phys., Vol. 60, No. 12, 2021, pp. 125506 1-6.
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2022
52)
Effect of high temperature homoepitaxial growth of 兝-Ga2O3 by hot-wall metalorganic vapor phase epitaxy,
Kazutada Ikenaga, Nami Tanaka, Taro Nishimura, Hirotaka Iino, Ken Goto, Masato Ishikawa, Hideaki Machida, Tomo Ueno, Yoshinao Kumagai*,J. Cryst. Growth, Vol. 582, 2022, pp. 126520 1-5.
53)
Effect of substrate orientation on homoepitaxial growth of 兝-Ga2O3 by halide vapor phase epitaxy (EP: Editor乫s Pick),
Ken Goto*, Hisashi Murakami, Akito Kuramata, Shigenobu Yamakoshi, Masataka Higashiwaki,and Yoshinao Kumagai*,
Appl. Phys. Lett., Vol. 120, Issue 10, 2022, pp. 102102 1-6.
54)
Vertical 兝-Ga2O3 Schottky barrier diodes with trench staircase field plate (Spotlights 2022),
Sandeep Kumar*, Hisashi Murakami, Yoshinao Kumagai, and Masataka Higashiwaki*,Appl. Phys. Express, Vol. 15, No. 5, 2022, pp. 054001 1-3.
55)
Influence of growth rate on homoepitaxial growth of AlN at 1450 亱C by hydride vapor phase
epitaxy,
Yoshinao Kumagai*, Ken Goto, Toru Nagashima, Reo Yamamoto, Michał Boćkowski, and Junji Kotani,epitaxy,
Appl. Phys. Express, Vol. 15, No. 11, 2022, pp. 115501 1-4.
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2023
56)
Thermodynamic analysis of 兝-Ga2O3 growth by molecular beam epitaxy,
Rie Togashi*, Haruka Ishida, Ken Goto, Masataka Higashiwaki, and Yoshinao Kumagai*,Jpn. J. Appl. Phys., Vol. 62, No. 1, 2023, pp. 015501 1-6.
57)
Characterization of electrical properties of 兝-Ga2O3 epilayer and bulk GaAs using terahertz time-domain ellipsometry,
Toshiyuki Iwamoto*, Verdad C. Agulto, Shuang Liu, Youwei Wang, Valynn Katrine Mag-usara,Takashi Fujii, Ken Goto, Yoshinao Kumagai, and Makoto Nakajima*,
Jpn. J. Appl. Phys., Vol. 62 No. SF, 2023, pp. SF1011 1-6.
58)
Observation of nanopipes in edge-defined film-fed grown 兝-Ga2O3 substrates and their effect on homoepitaxial surface hillocks,
Tomoka Nishikawa*, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Masahiro Uemukai,Tomoyuki Tanikawa*, and Ryuji Katayama,
Jpn. J. Appl. Phys., Vol. 62, No. SF, 2023, pp. SF1015 1-7.
59)
Mass spectrometric study of 兝-Ga2O3 growth process by metalorganic vapor phase epitaxy (Spotlights 2023),
Kazutada Ikenaga, Takahito Okuyama, Haruka Tozato, Taro Nishimura, Shogo Sasaki, Ken Goto,Masato Ishikawa, Yoshihiko Takinami, Hideaki Machida, and Yoshinao Kumagai*,
Jpn. J. Appl. Phys., Vol. 62, No. SF, 2023, pp. SF1019 1-6.
60)
Growth of 兛-In2O3 films with different concentrations of In2O3 powder used as source precursor by mist chemical vapor deposition,
Akito Taguchi*, Takumi Yamamoto, Kentaro Kaneko, Ken Goto, Takeyoshi Onuma, Tohru Honda,Yoshinao Kumagai, Shizuo Fujita, and Tomohiro Yamaguchi,
Jpn. J. Appl. Phys., Vol. 62, No. SF, 2023, pp. SF1023 1-4.
61)
Thermodynamic analysis of molecular beam epitaxy of group-III sesquioxides,
Rie Togashi*, Ken Goto, Masataka Higashiwaki, and Yoshinao Kumagai*,Jpn. J. Appl. Phys., Vol. 62, No. 5, 2023, pp. 055503 1-8.
62)
Comparison of triethylgallium and diethylgallium ethoxide for 兝-Ga2O3 growth by metalorganic vapor phase epitaxy,
Ken Goto*, Taro Nishimura, Masato Ishikawa, Takahito Okuyama, Haruka Tozato, Shogo Sasaki,Kazutada Ikenaga, Yoshihiko Takinami, Hideaki Machida, and Yoshinao Kumagai*,
J. Vac. Sci. Technol. A, Vol. 41, No. 4, 2023, pp. 042704 1-9.
63)
Heterostructure formation of group-III sesquioxides via cation-exchange reactions with metal chloride gases,
Ken Goto*, Tomo Ueno, and Yoshinao Kumagai*AIP Advances, Vol. 13, No. 8, 2023, pp. 085221 1-8.
64)
High-speed growth of thick high-purity 兝-Ga2O3 layers by low-pressure hot-wall metalorganic vapor phase epitaxy (Spotlights 2023),
Junya Yoshinaga, Haruka Tozato, Takahito Okuyama, Shogo Sasaki, Guanxi Piao,Kazutada Ikenaga, Ken Goto, Yuzaburo Ban, and Yoshinao Kumagai*
Appl. Phys. Express, Vol. 16, No. 9, 2023, pp. 095504 1-5.