弌斉暔
1)
THICK AND HIGH QUALITY GaN GROWTH ON GaAs (111)A SURFACES FOR PREPARATION OF FREESTANDING GaN SUBSTRATES,
Yoshinao Kumagai, Kikurou Takemoto, Hisashi Seki and Akinori Koukitu,Crystal and Epitaxial Growth Vol. 1,
Eds. V. Stefan and E. V. Zharikov (The Stefan University Press, La Jolla, 2002), pp. 39-47.
2)
AlN婎斅丒墳梡僨僶僀僗,
孎扟 媊捈,2009壔崌暔敿摫懱媄弍戝慡乮揹巕僕儍乕僫儖暿嶜乯, 戞2曇, 戞7復, 戞1愡, pp. 80-82.
3)
拏壔僈儕僂儉偺僴僀僪儔僀僪婥憡惉挿,
銝銙 柧攲, 孎扟 媊捈,拏壔暔婎斅偍傛傃奿巕惍崌婎斅偺惉挿偲僨僶僀僗摿惈, 僔乕僄儉僔乕弌斉, 戞1復, 戞1愡, 2009擭, pp. 1-27.
4)
擬椡妛夝愅偵傛傞壔崌暔敿摫懱偺婥憡惉挿,
銝銙 柧攲, 孎扟 媊捈, 嬥懏乮傾僌僱媄弍僙儞僞乕乯, 戞79姫, 戞11崋, 2009擭, pp. 972-978.
5)
Hydride Vapor Phase Epitaxy of GaN,
Akinori Koukitu and Yoshinao Kumagai,Springer Series in Materials Science 133, Technology of Gallium Nitride Crystal Growth,
Eds. Dirk Ehrentraut, Elke Meissner, Michal Bockowski (Springer, 2010), pp. 31-60
6)
Growth of III-Nitrides with Halide Vapor Phase Epitaxy (HVPE),
Carl Hemmingsson, Bo Monemar, Yoshinao Kumagai, Akinori Koukitu,Springer Handbook of Crystal Growth,
Eds. Govindhan Dhanaraj, Kullaiah Byrappa, Vishwanath Prasad, Michael Dudley (Springer, 2010), pp. 869-896
7)
拏壔暔敿摫懱敪岝慺巕偺奐敪摦岦,
孎扟 媊捈, 懞忋 彯, 銝銙 柧攲,Journal of the Society of Non-Traditional Technology, No. 454, 2012, pp. 9-12.
8)
GaN僷儚乕僨僶僀僗偺媄弍揥奐,
銝銙 柧攲, 孎扟 媊捈, 懞忋 彯,僒僀僄儞僗仌僥僋僲儘僕乕, ISBN 978-4-86428-044-0, 戞2復, 戞1愡, 2012擭, pp. 19-37.
9)
AlN婎斅丒墳梡僨僶僀僗,
孎扟 媊捈,2013壔崌暔敿摫懱媄弍戝慡乮Electronic Journal暿嶜乯, 戞2曇, 戞7復, 戞1愡, pp. 85-88.
10)
僴僀僪儔僀僪婥憡惉挿朄丂乣InN傪帠椺偲偟偰乣,
孎扟 媊捈, 銝銙 柧攲,億僗僩僔儕僐儞敿摫懱丂亅僫僲惉枌僟僀僫儈僋僗偲婎斅丒奅柺岠壥亅,
姅幃夛幮僄僰丒僥傿乕丒僄僗, ISBN 978-4-86469-059-1, 戞3曇, 戞1復, 2013擭, pp. 359-366.
11)
HVPE朄傪梡偄偨扨寢徎AlN惉挿媄弍偲AlN婎斅忋怺巼奜LED,
栘壓 嫓, 孎扟 媊捈, 堜忋 怳堦榊,OPTRONICS, Vol. 33, No. 2, 2014, pp. 67-70.
12)
HVPE朄AlN婎斅忋怺巼奜LED偺奐敪,
栘壓 嫓, 孎扟 媊捈, 堜忋 怳堦榊,OPTRONICS, Vol. 34, No. 11, 2015, pp. 96-100.
13)
巁壔僈儕僂儉僷儚乕僨僶僀僗偺嵟怴媄弍偲幚梡壔傊偺壽戣,
搶榚 惓崅, 孎扟 媊捈, 懞忋 彯, 憅枖 楴恖,Energy Device, Vol. 3, No. 6, 2016, pp. 43-47.
14)
Defects and impurities in 兝-Ga2O3,
Nguyen Tien Son, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar,Ultra-Wide Bandgap Semiconductor Materials,
Edited by Meiyong Liao, Bo Shen, Zhanguo Wang (Elsevier, 2019), pp. 331-345.
15)
Halide Vapor Phase Epitaxy 1 - Homoepitaxial Growth of 兝-Ga2O3 on 兝-Ga2O3 Substrates,
Yoshinao Kumagai, Keita Konishi, Ken Goto, Hisashi Murakami and Bo Monemar,Gallium Oxide - Materials Properties, Crystal Growth, and Devices,
Edited by Masataka Higashiwaki and Shizuo Fujita (Springer, 2020), pp. 185-202.
16)
Phonon Properties - Phonon and Free Charge Carrier Properties in Monoclinic-Symmetry
兝-Ga2O3,
Mathias Schubert, Alyssa Mock, Rafał Korlacki, Sean Knight, Bo Monemar, Ken Goto,兝-Ga2O3,
Yoshinao Kumagai, Akito Kuramata, Zbigniew Galazka, Günther Wagner, Marko J. Tadjer,
Virginia D. Wheeler, Masataka Higashiwaki and Vanya Darakchieva,
Gallium Oxide - Materials Properties, Crystal Growth, and Devices,
Edited by Masataka Higashiwaki and Shizuo Fujita (Springer, 2020), pp. 501-534.
17)
兝宆巁壔僈儕僂儉寢徎偺崅弮搙惉挿朄,
懞忋 彯, 孎扟 媊捈,師悽戙僷儚乕敿摫懱偺奐敪丒昡壙偲幚梡壔, 姅幃夛幮僄僰丒僥傿乕丒僄僗,
ISBN 978-4-86043-767-1, 戞1曇, 戞4復, 戞2愡, 2022擭, pp. 193-202.