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4th IEEE Electron Devices Technology and Manufacturing Conference 2020 (EDTM 2020), Apr. 6-21, 2020, Penang, Malaysia
1)
(Invited) Vertical Gallium Oxide Transistors with Current Aperture Formed Using Nitrogen-Ion Implantation Process
Masataka Higashiwaki, Man Hoi Wong, Ken Goto, Hisashi Murakami, and Yoshinao Kumagai
3D-1, Oral.
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The 8th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA 2020), Apr. 21-23, 2020, Pacifico Yokohama, Japan
2)
Thermodynamic analysis of metalorganic vapor phase epitaxy of group-III sesquioxides
Saori Matsugai, Nami Tanaka, Sakiko Yamanobe, Nao Takekawa, Ken Goto, Yoshinao Kumagai
Presentation: Apr. 22, LEDIAp-10, Poster.
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3)
Thermodynamic study of (AlxGa1-x)2O3 ternary alloy growth by metalorganic vapor phase epitaxy
Nami Tanaka, Saori Matsugai, Sakiko Yamanobe, Nao Takekawa, Ken Goto, Yoshinao Kumagai
Presentation: Apr. 22, LEDIAp-16, Poster.
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237th ECS Meeting, May. 10-14, 2020, Montreal, Canada
4)
(Invited) Fundamentals and Process Technologies of Current Aperture Vertical Ga2O3 MOSFETs
Man Hoi Wong, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki
Presentation: May. 11, H01-1327, Oral.
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第81回応用物理学会秋季学術講演会, 2020年9月8日-11日, オンライン開催
5)
水素雰囲気異方性熱エッチング(HEATE)法によるHVPE-In2O3成長層のエッチング特性の熱力学的検討
富樫 理恵, 笠羽 遼, 大江 優輝, 後藤 健, 熊谷 義直, 菊池 昭彦
9月9日発表, 9p-Z20-16, 口頭.
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6)
Aperture-Limited Conduction in Vertical β-Ga2O3 MOSFETs with Nitrogen-Implanted Current Blocking Layer
Man Hoi Wong, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki
9月11日発表, 11p-Z04-6, 口頭.
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応用物理学会先進パワー半導体分科会 第17回研究会「次世代パワー半導体Ga2O3とダイヤモンドの進展」, 2020年9月24日, オンライン開催
7)
(Invited) イオン注入ドーピングプロセスを用いた縦型β-Ga2O3パワートランジスタ開発
東脇 正高, Man Hoi Wong, 後藤 健, 村上 尚, 熊谷 義直
9月24日発表, 口頭.
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2020 International Conference on Solid State Devices and Materials (SSDM 2020), Sep. 27-30, 2020, All-Virtual Conference
8)
Aperture-Limited Conduction from Acceptor Diffusion in Current Aperture Vertical β-Ga2O3 MOSFETs
Man Hoi Wong, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki
Presentation: Sep. 28, D-1-04, Oral.
45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2020), Nov. 8-13, 2020, A virtual event
9)
Electrical properties of β-Ga2O3 homoepitaxial layer measured by terahertz time-domain spectroscopy
Verdad Agulto, Kazuhiro Toya, Thanh Nhat Khoa Phan, Hideaki Kitahara, Valynn Katrine Mag-usara, Melvin John Empizo, Toshiyuki Iwamoto, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Nobuhiko Sarukura, Masashi Yoshimura, and Makoto Nakajima
Presentation: Nov. 9, P063, Poster.
2020 Virtual MRS Spring Meeting & Exhibit, Nov. 27 - Dec. 4, 2020, A virtual meeting
10)
(Invited) Halide Vapor Phase Epitaxy of Group-III Sesquioxides
Yoshinao Kumagai, Ken Goto, Rie Togashi, Hisashi Murakami, Akito Kuramata, Shigenobu Yamakoshi, Masataka Higashiwaki
Presentation: Dec. 1, S.EL15.04.05, Oral.
第72回CVD研究会, 2020年12月18日, オンライン開催
11)
(Invited) ハライド気相成長法によるβ-Ga2O3高品質ホモエピタキシャル層の高速成長と導電性制御
熊谷 義直, 後藤 健, 村上 尚, 倉又 朗人, 山腰 茂伸, 東脇 正高
12月18日発表, 口頭.
International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 (ISWGPDs 2021), Jan. 19-21, 2021, Online
12)
(Keynote) Thermodynamic and experimental study of β-Ga2O3 growth by halide vapor phase epitaxy for fabrication of epitaxial wafers for power device applications
Yoshinao Kumagai, Ken Goto, Hisashi Murakami, Akito Kuramata, Shigenobu Yamakoshi, and Masataka Higashiwaki
Presentation: Jan. 21, Keynote11, Oral.
The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8), Mar. 1-3, 2021, Online
13)
Thermodynamic study and growth demonstration of Ga2O3 by HVPE using GaCl and GaCl3 as Ga precursors
Ken Goto, Takashi Kamo, Yuya Saimoto, Akane Mori, Yoshinao Kumagai
Presentation: Mar. 1, C01-03-12, Oral.
14)
Growth of stable and/or metastable phases of Ga2O3 and In2O3 by halide vapor phase epitaxy and mist chemical vapor deposition
Yoshinao Kumagai, Ken Goto, Rie Togashi, Tomohiro Yamaguchi, Hisashi Murakami
Presentation: Mar. 2, C10-04-19, Oral.
15)
Epitaxial mist chemical vapor deposition growth and characterization of α-In2O3 films on α-Al2O3 substrates
Tomohiro Yamaguchi, Takahiro Nagata, Subaru Takahashi, Takanori Kiguchi, Atsushi Sekiguchi, Takeyoshi Onuma, Tohru Honda, Ken Goto, Yoshinao Kumagai, Kentaro Kaneko, Shizuo Fujita
Presentation: Mar. 2, C10-04-20, Oral.
16)
Thermodynamic study of etching characteristics of HVPE-grown In2O3 layers by hydrogen-environment anisotropic thermal etching
Rie Togashi, Ryo Kasaba, Yuki Ooe, Ken Goto, Yoshinao Kumagai, Akihiko Kikuchi
Presentation: Mar. 2, C10-04-21, Oral.
2021 Photonics West, Mar. 6-11, 2021, Online Only
17)
(Invited) High-temperature growth of high-purity AlN layers on AlN substrates by HVPE
Nao Takekawa, Ken Goto, Toru Nagashima, Reo Yamamoto, Junji Kotani, Yoshinao Kumagai
11686-38, Oral.
18)
(Invited) Mass production of AlN substrates by high speed homoepitaxial growth
Yoshinao Kumagai, Nao Takekawa, Ken Goto, Toru Nagashima, Reo Yamamoto, Junji Kotani
11706-19, Oral.
第68回応用物理学会春季学術講演会, 2021年3月16日-19日, オンライン開催
19)
(Invited) 酸化物半導体結晶Ga2O3およびIn2O3の準安定相発現機構の検討
熊谷 義直, 後藤 健, 富樫 理恵, 山口 智広, 村上 尚
3月18日発表, 18p-Z04-4, 口頭.
20)
AlN単結晶上にHVPE成長させたSi添加AlN基板の発光特性
秩父 重英, 嶋 絋平, 小島 一信, Baxter Moody, 三田 清二, Ramon Collazo, Zlatko Sitar, 熊谷 義直, 上殿 明良
3月19日発表, 19a-Z27-7, 口頭.
21)
GaCl-O2系HVPE法によるβ-Ga2O3成長における過剰Cl2供給効果
森 あかね, 税本 雄也, 後藤 健, 熊谷 義直
3月19日発表, 19a-Z33-9, 口頭.
