暯惉29擭搙
International Conference on Light-Emitting Devices and Their Industrial Applications '17 (LEDIA '17), Apr. 19-21, 2017, Pacifico Yokohama, Japan
1)
High temperature growth of thick InGaN layer with the indium solid composition of 10% using tri-halide vapor phase epitaxy
Naoya Matsumoto, Misaki Meguro, Kentaro Ema, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
Presentation: Apr. 20, LEDp2-8, Poster.
2)
Temperature dependence of In2O3 growth on (0001) sapphire by HVPE
Takayuki Suga, Shiyu Numata, Rie Togashi, Hisashi Murakami, Bo Monemar, and Yoshinao Kumagai
Presentation: Apr. 20, LEDp2-13, Poster.
3)
Wet chemical etching of MOVPE-AlN templates for evaluation of threading dislocations
Taro Mitsui, Mari Higuchi, Toru Nagashima, Toru Kinoshita, Reo Yamamoto, Bo Monemar, and Yoshinao Kumagai
Presentation: Apr. 20, LEDp2-30, Poster.
44th International Conference on Metallurgical Coatings and Thin Films (44th ICMCTF), Apr. 24-28, 2017, Town & Country Hotel & Convention Center, San Diego, CA, U.S.A.
4)
(Invited) Application of Gallium Oxide for High-Power Electronics
M. Higashiwaki, M. H. Wong, K. Konishi, K. Sasaki, K. Goto, H. Murakami, Y. Kumagai, A. Kuramata, and S. Yamakoshi
Presentation: Apr. 24, C2-1-1, Oral.
9th International Conference on Materials for Advanced Technologies (ICMAT 2017), Jun. 18-23, 2017, Suntec, Singapore
5)
(Invited) Application of Gallium Oxide for High-Power Electronics
Masataka Higashiwaki, Man Hoi Wong, Keita Konishi, Kohei Sasaki, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Akito Kuramata, and Shigenobu Yamakoshi
Presentation: Jun. 20, Oral.
75th Device Research Conference (75th DRC), Jun. 25-28, 2017, University of Notre Dame, IN, U.S.A.
6)
(Late News) First Demonstration of Vertical Ga2O3 MOSFET: Planar Structure with a Current Aperture
Man Hoi Wong, Ken Goto, Akito Kuramata, Shigenobu Yamakoshi, Hisashi Murakami, Yoshinao Kumagai, and Masataka Higashiwaki
Presentation: Jun. 26, Oral.
擔杮寢徎惉挿妛夛僫僲峔憿丒僄僺僞僉僔儍儖惉挿暘壢夛 戞9夞僫僲峔憿丒僄僺僞僉僔儍儖惉挿島墘夛, 2017擭7寧13擔-15擔, 杒奀摴戝妛 僼儘儞僥傿傾墳梡壢妛尋媶搹
7)
崅昳幙InGaN岤枌惉挿傪栚巜偟偨拞娫憌摫擖偺専摙
怉堜 棦弿, 峕娫 尋懢榊, 徏杮 彯栫, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
7寧14擔敪昞, Fr1-3, 億僗僞乕.
8)
僄僢僠僺僢僩傪梡偄偨MOVPE AlN僥儞僾儗乕僩偺娧捠揮埵昡壙
旙岥 恀棟, 嶰堜 懢楴, 塱搰 揙, 栘壓 嫓, 嶳杮 楁弿, 彫惣 宧懢, Bo Monemar, 孎扟 媊捈
7寧14擔敪昞, Fr1-6, 億僗僞乕.
9)
崅昳幙拏壔傾儖儈僯僂儉偺僴僀僪儔僀僪婥憡惉挿偵偍偗傞Si僪乕僾検惂屼
彫惣 宧懢, 嶳杮 楁弿, 晉妦 棟宐, 塱搰 揙, 栘壓 嫓, Rafael Dalmau, Raoul Schlesser, 懞忋 彯, Ramón Collazo, Bo Monemar, Zlatko Sitar, 孎扟 媊捈
7寧14擔敪昞, Fr1-7, 億僗僞乕.
亙敪昞彠椼徿庴徿亜
徿忬
10)
僩儕僴儔僀僪婥憡惉挿朄偵傛傞InGaN宯岝僨僶僀僗嶌惢偵岦偗偨枌岤惂屼惈偺専摙
峕娫 尋懢榊, 徏杮 彯栫, 怉堜 棦弿, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
7寧14擔敪昞, Fr1-14, 億僗僞乕.
11)
N嬌惈GaN偺崅擬懴惈傪棙梡偟偨僀僆儞拲擖僾儘僙僗偺奐敪
媑揷 寬恖, 彫惣 宧懢, 崅搰 怣栫, 晉妦 棟宐, 峕屗 夒惏, 孎扟 媊捈
7寧14擔敪昞, Fr1-20, 億僗僞乕.
The 12th International Conference on Nitride Semiconductors (ICNS-12)丆July. 24-28, 2017, Strasbourg Convention Center, Strasbourg, France
12)
(Invited) Pursuing the Promise of Ultra-Wide-Bandgap Ga2O3 Power Device Technology
Masataka Higashiwaki, Man Hoi Wong, Keita Konishi, Kohei Sasaki, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi
Presentation: July. 27, C 8.2, Oral.
The 29th International Conference on Defects in Semiconductors (ICDS-29), July. 31 - Aug. 4, 2017, Kunibiki Messe, Matsue, Japan
13)
(Invited) Gallium Oxide-Based Devices for Power Electronics and Emerging Applications
Masataka Higashiwaki, Man Hoi Wong, Keita Konishi, Kohei Sasaki, Ken Goto, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Hisashi Murakami, Yoshinao Kumagai, Akito Kuramata, and Shigenobu Yamakoshi
Presentation: July. 31, MoB2-I1, Oral.
The 21st American Conference on Crystal Growth and Epitaxy (ACCGE-21), July 30 - Aug. 4, 2017, Eldorado Hotel & Spa, Santa Fe, NM, U.S.A.
14)
(Invited) Latest progress in gallium oxide epitaxial growth technologies for power devices
Masataka Higashiwaki, Yoshiaki Nakata, Man Hoi Wong, Keita Konishi, Takafumi Kamimura, Ken Goto, Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi, Hisashi Murakami, Yoshinao Kumagai
Presentation: Aug. 3, Oral.
撈棫峴惌朄恖擔杮妛弍怳嫽夛敿摫懱奅柺惂屼媄弍戞154埾堳夛 戞104夞尋媶夛乽巁壔暔敿摫懱丗尰忬偲崱屻偺恑揥乿丆2017擭8寧7擔, 僉儍儞僷僗僀僲儀乕僔儑儞僙儞僞乕乮CIC乯搶嫗
15)
(Invited) 巁壔僈儕僂儉僷儚乕僨僶僀僗偺恑揥
搶榚 惓崅, 儚儞 儅儞儂僀, 彫惣 宧懢, 拞揷 媊徍, 屻摗 寬, 嵅乆栘 岞暯, 憅枖 楴恖, 嶳崢 栁怢, 懞忋 彯, 孎扟 媊捈
8寧7擔敪昞, 岥摢丏
戞78夞墳梡暔棟妛夛廐婫妛弍島墘夛, 2017擭9寧5擔-8擔, 暉壀崙嵺夛媍応
16)
Planar Vertical Ga2O3 MOSFETs with a Current Aperture
Man Hoi Wong, Ken Goto, Akito Kuramata, Shigenobu Yamakoshi, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki
9寧5擔敪昞, 5a-C17-6, 岥摢丏
17)
僄僢僠僺僢僩傪梡偄偨HVPE-AlN婎斅偺娧捠揮埵昡壙
旙岥 恀棦, 嶰堜 懢楴, 塱搰 揙, 嶳杮 楁弿, 彫惣 宧懢, Galia Pozina, Rafael Dalmau, Raoul Schlesser, Ramón Collazo, Bo Monemar, Zlatko Sitar, 孎扟 媊捈
9寧6擔敪昞, 6a-A301-8, 岥摢丏
18)
崅壏AlN-HVPE偵偍偗傞宯撪巁慺偑Si僪乕僾検偵梌偊傞塭嬁
彫惣 宧懢, 嶳杮 楁弿, 晉妦 棟宐, 塱搰 揙, 栘壓 嫓, Rafael Dalmau, Raoul Schlesser, 懞忋 彯, Ramón Collazo, Bo Monemar, Zlatko Sitar, 孎扟 媊捈
9寧6擔敪昞, 6a-A301-10, 岥摢丏
19)
僴儔僀僪婥憡惉挿朄偵傛傞(0001)僒僼傽僀傾婎斅忋弨埨掕憡兛-Ga2O3惉挿偺専摙
壓愳 摴婱, 嵅榓揷 梲暯, 彫惣 宧懢, 懞忋 彯, Bo Monemar, 孎扟 媊捈
9寧7擔敪昞, 7p-C17-3, 岥摢丏
20)
堎側傞巁慺尮傪梡偄偨巁壔僈儕僂儉僴儔僀僪婥憡惉挿偺斾妑
彫惣 宧懢, 屻摗 寬, 晉妦 棟宐, 懞忋 彯, 搶榚 惓崅, 憅枖 楴恖, 嶳崢 栁怢, Bo Monemar, 孎扟 媊捈
9寧7擔敪昞, 7p-C17-4, 岥摢丏
21)
暘巕慄僄僺僞僉僔乕朄偵傛傞Ga2O3寢徎惉挿偺擬椡妛夝愅
嵅榓揷 梲暯, 忋揷 嵷寧, 彫惣 宧懢, 孎扟 媊捈
9寧7擔敪昞, 7p-C17-9, 岥摢丏
22)
僴儔僀僪婥憡惉挿朄傪梡偄偨2僀儞僠(001) 兝-Ga2O3婎斅忋儂儌僄僺僞僉僔儍儖惉挿
榚杮 戝庽, 僥傿儐 僋傽儞 僩僁, 嵅乆栘 岞暯, 屻摗 寬, 彫惣 宧懢, 懞忋 彯, 憅枖 楴恖, 孎扟 媊捈, 嶳崢 栁怢
9寧7擔敪昞, 7p-C17-11, 岥摢丏
23)
僴儔僀僪婥憡惉挿朄偵傛傞In2O3惉挿偺壏搙埶懚惈
拞敤 廏棙, 恵夑 棽擵, 彫惣 宧懢, 晉妦 棟宐, 懞忋 彯, Plamen P. Paskov, Bo Monemar, 孎扟 媊捈
9寧7擔敪昞, 7p-C17-15, 岥摢丏
24)
HVPE朄傪梡偄偨In2O3惉挿偵偍偗傞惉挿懍搙偺塭嬁
恵夑 棽擵, 拞敤 廏棙, 彫惣 宧懢, 晉妦 棟宐, 懞忋 彯, Plamen P. Paskov, Bo Monemar, 孎扟 媊捈
9寧7擔敪昞, 7p-C17-16, 岥摢丏
25)
(Invited) Ga2O3揹巕僨僶僀僗奐敪偺尰忬偲揥朷丂乣僷儚乕僨僶僀僗丄偦偟偰乣
搶榚 惓崅, 儚儞 儅儞儂僀, 彫惣 宧懢, 拞揷 媊徍, 忋懞 悞巎, 椦 壠峅, 屻摗 寬, 嵅乆栘 岞暯, 晲嶳 徍寷, 杚栰 崅峢, 戝搰 晲, 憅枖 楴恖, 嶳崢 栁怢, 懞忋 彯, 孎扟 媊捈
9寧8擔敪昞, 8p-A204-9, 岥摢丏
2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017)丆Sep. 12-15, 2017, University of Parma, Parma, Italy
26)
Optical and electronic properties of monoclinic Ga2O3 unravelled
M. Schubert, A. Mock, R. Korlacki, S. Knight, V. Darakchieva, B. Monemar, H. Murakami, Y. Kumagai, K. Goto, and M. Higashiwaki
Presentation: Sep. 13, O13, Oral.
27)
Electronic properties of residual donor in unintentionally doped 兝-Ga2O3
N. T. Son, K. Goto, R. Togashi, H. Murakami, Y. Kumagai, A. Kuramata, M. Higashiwaki, S. Yamakoshi, and B. Monemar
Presentation: Sep. 14, O18, Oral.
28)
(Invited) Advances in Ga2O3 MOSFETs for Power and Radiation-Hard Electronics
M. H. Wong, Y. Nakata, C.-H. Lin, Y. Morikawa, K. Sasaki, K. Goto, A. Takeyama, T. Makino, T. Ohshima, H. Murakami, Y. Kumagai, A. Kuramata, S. Yamakoshi, and M. Higashiwaki
Presentation: Sep. 14, I8, Oral.
29)
Homoepitaxial Growth on 2-Inch-Diameter (001) 兝-Ga2O3 Substrates by Halide Vapor Phase Epitaxy
Q. T. Thieu, D. Wakimoto, K. Sasaki, K. Goto, K. Konishi, H. Murakami, A. Kuramata, Y. Kumagai, and S. Yamakoshi
Presentation: Sep. 15, P74, Poster.
30)
Temperature-Dependent Growth of Ga2O3 on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy
M. Shimokawa, Y. Sawada, K. Konishi, H. Murakami, B. Monemar, and Y. Kumagai
Presentation: Sep. 15, P80, Poster.
31)
Influence of Growth Rate on Halide Vapor Phase Epitaxy of c-In2O3 on c-Plane Sapphire Substrates
T. Suga, H. Nakahata, K. Konishi, R. Togashi, H. Murakami, P. P. Paskov, B. Monemar, and Y. Kumagai
Presentation: Sep. 15, P98, Poster.
32)
(Invited) Halide Vapor Phase Epitaxy of 兝-Ga2O3 Homoepitaxial Layers Using O2 and H2O as Oxygen Sources
K. Konishi, K. Goto, R. Togashi, H. Murakami, M. Higashiwaki, A. Kuramata, S. Yamakoshi, B. Monemar, and Y. Kumagai
Presentation: Sep. 15, I11, Oral.
33)
Charge Trapping Processes in Ga2O3 Schottky Diodes
C. De Santi, M. Meneghini, M. H. Wong, K. Goto, H. Murakami, Y. Kumagai, A. Kuramata, S. Yamakoshi, M. Higashiwaki, G. Meneghesso, and E. Zanoni
Presentation: Sep. 15, O43, Oral.
10th International Workshop on Bulk Nitride Semiconductors (IWBNS-X)丆Sep. 18-22, 2017, Hotel Nuuksio, Espoo, Finland
34)
(Invited) THVPE of GaN -current topics-
Akinori Koukitu, Nao Takekawa, Hisashi Murakami, Yoshinao Kumagai, Akira Yamaguchi, Koh Matsumoto
Presentation: Sep. 19, Oral.
35)
(Invited) Tri-Halide Vapor Phase Epitaxy of Thick InGaN and AlGaN Ternary Alloys
Hisashi Murakami, Kentaro Ema, Naoya Matsumoto, Machi Takahashi, Rio Uei, Yoshinao Kumagai, and Akinori Koukitu
Presentation: Sep. 22, Oral.
11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017), Oct. 8-12, 2017, Banff Centre, Banff, Alberta, Canada
36)
(Invited) Development of bulk AlN substrates for deep-UV optoelectronic devices by HVPE method
Yoshinao Kumagai, Rie Togashi, Toru Nagashima, Toru Kinoshita, Reo Yamamoto, Rafael Dalmau, Raoul Schlesser, Hisashi Murakami, Ramón Collazo, Akinori Koukitu, Bo Monemar, and Zlatko Sitar
Presentation: Oct. 10, Tu4.3, Oral.
37)
(Late News) Influence of ambient oxygen on Si incorporation during hydride vapor phase epitaxy of AlN at high temperature
Keita Konishi, Reo Yamamoto, Rie Togashi, Toru Nagashima, Rafael Dalmau, Raoul Schlesser, Hisashi Murakami, Ramón Collazo, Bo Monemar, Zlatko Sitar, and Yoshinao Kumagai
Presentation: Oct. 10, Tu8.2, Oral.
38)
Characterization of threading dislocations in HVPE-grown AlN substrates by wet chemical etching
Taro Mitsui, Mari Higuchi, Toru Nagashima, Toru Kinoshita, Reo Yamamoto, Galia Pozina, Rafael Dalmau, Raoul Schlesser, Ramón Collazo, Bo Monemar, Zlatko Sitar, and Yoshinao Kumagai
Presentation: Oct. 10, TP22, Poster.
39)
Thick InGaN layer with the indium solid composition over 10% using tri-halide vapor phase epitaxy
H. Murakami, K. Ema, N. Matsumoto, M. Meguro, H. Murakami, Y. Kumagai, and A. Koukitu
Presentation: Oct. 12, Th4.1, Oral.
撈棫峴惌朄恖擔杮妛弍怳嫽夛儚僀僪僊儍僢僾敿摫懱岝丒揹巕僨僶僀僗戞162埾堳夛 100夞婰擮摿暿岞奐僔儞億僕僂儉乽儚僀僪僊儍僢僾敿摫懱偺婎斦媄弍偲彨棃揥朷丂乣僷儚乕敿摫懱傪拞怱偲偟偰乣乿, 2017擭10寧26擔-27擔, 儘儚僕乕儖儂僥儖朙嫶
40)
(Invited) 巁壔僈儕僂儉僷儚乕僨僶僀僗偺嵟愭抂
搶榚 惓崅, 憅枖 楴恖, 懞忋 彯, 孎扟 媊捈
10寧27擔敪昞, 岥摢丏
AVS 64th International Symposium & Exhibition, Oct. 29 - Nov. 3, 2017, Tampa Convention Center, Tampa, FL, U.S.A.
41)
(Invited) Ultra-wide-bandgap Ga2O3 Material and Electronic Device Technologies
M. Higashiwaki, M.H. Wong, K. Konishi, Y. Nakata, T. Kamimura, K. Sasaki, K. Goto, A. Takeyama, T. Makino, T. Ohshima, H. Murakami, Y. Kumagai, A. Kuramata, S. Yamakoshi
Presentation: Nov. 2, EM+NS-ThA3, Oral.
墳梡暔棟妛夛寢徎岺妛暘壢夛 戞6夞寢徎岺妛枹棃弇, 2017擭11寧2擔, 搶嫗戝妛嬵応僉儍儞僷僗
42)
暘巕慄僄僺僞僉僔乕朄傪梡偄偨Ga2O3寢徎惉挿偺摿堎惈
嵅榓揷 梲暯, 忋揷 嵷寧, 彫惣 宧懢, 孎扟 媊捈
11寧2擔敪昞, 2P14, 億僗僞乕丏
43)
HVPE朄傪梡偄偨c柺僒僼傽僀傾婎斅忋Ga2O3惉挿偺壏搙埶懚惈偺挷嵏
壓愳 摴婱, 嵅榓揷 梲暯, 彫惣 宧懢, 懞忋 彯, Bo Monemar, 孎扟 媊捈
11寧2擔敪昞, 2P15, 億僗僞乕丏
44)
c柺sapphire婎斅忋c-In2O3偺HVPE惉挿偵偍偗傞惉挿懍搙偺塭嬁
挿堜 尋懢, 恵夑 棽擵, 拞敤 廏棙, 彫惣 宧懢, 晉妦 棟宐, 懞忋 彯, Plamen P. Paskov, Bo Monemar, 孎扟 媊捈
11寧2擔敪昞, 2P16, 億僗僞乕丏
45)
THVPE朄傪梡偄偨GaN偺崅壏崅懍惉挿
椦揷 捈恖, 抾愳 捈, 戝娭 戝曘, 嶳岥 峎, 懞忋 彯, 孎扟 媊捈, 徏杮 岟, 銝銙 柧攲
11寧2擔敪昞, 2P20, 億僗僞乕丏
36th Electronic Materials Symposium (EMS-36), Nov. 8-10, 2017, Nagahama Royal Hotel, Shiga
46)
(Plenary) HVPE growth of the group III nitrides
A. Koukitu, Y. Kumagai, and H. Murakami
Presentation: Nov. 8, Oral.
International Workshop on UV Materials and Devices 2017 (IWUMD 2017), Nov. 14-18, 2017, Centennial Hall, Kyushu University School of Medicine, Fukuoka, Japan
47)
(Tutorial Lecture) Preparation of bulk AlN substrates by hydride vapor phase epitaxy
Yoshinao Kumagai
Presentation: Nov. 14, Oral.
48)
High temperature growth of GaN by THVPE method
Nao Takekawa, Naoto Hayashida, Daisuke Oozeki, Akira Yamaguchi, Hisashi Murakami, Yoshinao Kumagai, Koh Matsumoto, Akinori Koukitu
Presentation: Nov. 15, We-P51, Poster.
49)
Solid-Source Tri-Halide Vapor Phase Epitaxy of Thick GaN and AlGaN using GaCl3 and AlCl3
Hisashi Murakami, Machi Takahashi, Yoshinao Kumagai, Akinori Koukitu
Presentation: Nov. 15, We-13, Oral.
50)
Defect selective etching of MOVPE grown AlN and HVPE grown bulk AlN substrates in a molten KOH/NaOH eutectic
Mari Higuchi, Taro Mitsui, Toru Nagashima, Reo Yamamoto, Keita Konishi, Galia Pozina, Rafael Dalmau, Raoul Schlesser, Ramón Collazo, Bo Monemar, Zlatko Sitar, and Yoshinao Kumagai
Presentation: Nov. 16, Th-P51, Poster.
51)
Thermodynamic analysis on molecular beam epitaxy of Ga2O3
Yohei Sawada, Natsuki Ueda, Keita Konishi, and Yoshinao Kumagai
Presentation: Nov. 16, Th-17, Oral.
The 4th International Conference on Advanced Electromaterials (ICAE 2017), Nov. 21-24, 2017, Ramada Plaza Jeju Hotel, Jeju, Korea
52)
(Invited) Unlocking the Potential of Ga2O3 MOSFETs for Power Electronics
Man Hoi Wong, Kohei Sasaki, Yoshiaki Nakata, Chia-Hung Lin, Yoji Morikawa, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi, Masataka Higashiwaki
Presentation: Nov. 21, S10-0284, Oral.
2017 Workshop on Innovative Nanoscale Devices and Systems (WINDS 2017), Nov. 26 - Dec. 1, 2017, Hapuna Beach Prince Hotel, Kohala Coast, HI, U.S.A.
53)
(Invited) Recent achievements in Ga2O3 MOSFET technology
Masataka Higashiwaki, Man Hoi Wong, Yoshiaki Nakata, Chia-Hung Lin, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Naoki Hatta, Kuniaki Yagi, Ken Goto, Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi, Hisashi Murakami, and Yoshinao Kumagai
Presentation: Nov. 27, Oral.
戞46夞寢徎惉挿崙撪夛媍乮JCCG-46乯, 2017擭11寧27擔-29擔, 儂僥儖僐儞僐儖僪昹徏
54)
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2018 Photonics West, Jan. 27 - Feb. 1, 2018, The Moscone Center, San Francisco, CA, U.S.A.
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Current Aperture Vertical Ga2O3 MOSFETs with N-Ion-Implanted Current Blocking Layer
Man Hoi Wong, Ken Goto, Akito Kuramata, Shigenobu Yamakoshi, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki
3寧18擔敪昞, 18p-C302-19, 岥摢丏
徿忬