暯惉28擭搙
2016 E-MRS Spring Meeting and Exhibit, May. 2-6, 2016, Congress Center in Lille, Lille, France
1)
(Invited) Gallium oxide-based devices for power electronics and beyond
M. Higashiwaki, M. H. Wong, K. Konishi, K. Sasaki, T. Kamimura, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi
Presentation: May. 4, L.VIII.1, Oral.
International Conference on Light-Emitting Devices and Their Industrial Applications '16 (LEDIA '16), May. 18-20, 2016, Pacifico Yokohama, Japan
2)
High temperature growth of thick InGaN layers using tri-halide vapor phase epitaxy
M. Meguro, T. Hirasaki, T. Hasegawa, Q. T. Thieu, H. Murakami, Y. Kumagai, B. Monemar, and A. Koukitu
Presentation: May. 19, 19a-LED3-5, Oral.
3)
Growth of In2O3 by Halide Vapor Phase Epitaxy
S. Numata, R. Togashi, K. Goto, H. Murakami, A. Kuramata, S. Yamakoshi, and Y. Kumagai
Presentation: May. 19, 19a-LED3-9, Oral.
墳梡暔棟妛夛寢徎岺妛暘壢夛 戞145夞尋媶夛乽儚僀僪僊儍僢僾敿摫懱傪巟偊傞僶儖僋婎斅偲僄僺媄弍乿, 2016擭6寧3擔, 柤屆壆戝妛搶嶳僉儍儞僷僗
4)
(Invited) HVPE朄偵傛傞n宍AlN僶儖僋婎斅嶌惢偺専摙
孎扟 媊捈, 晉妦 棟宐, 嶳杮 楁弿, 塱搰 揙, 栘壓 嫓, 懞忋 彯, Monemar Bo, 銝銙 柧攲
6寧3擔敪昞, 岥摢.
5)
(Invited) Ga2O3婎斅偲儂儌/僿僥儘僄僺僞僉僔儍儖惉挿媄弍
嵅乆栘 岞暯, 憅枖 楴恖, 憹堜 寶榓, 屻摗 寬, 怷搰 壝崕, 斞捤 榓岾, 僥傿儐 僋傽儞 僩僁, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 儌僱儅乕 儃, 搶榚 惓崅, 嶳崢 栁怢
6寧3擔敪昞, 岥摢.
74th Device Research Conference (74th DRC), Jun. 19-22, 2016, University of Delaware, Newark, DE, U.S.A.
6)
(Late News) Ga2O3 Field-Plated Schottky Barrier Diodes with a Breakdown Voltage of Over 1 kV
Keita Konishi, Ken Goto, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akito Kuramata, Shigenobu Yamakoshi, and Masataka Higashiwaki
Presentation: Jun. 21, Oral.
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016), Jul. 4-6, 2016, Hakodate Kokusai Hotel, Hakodate, Japan
7)
(Invited) Recent advances in gallium oxide device technologies
M. Higashiwaki, M. H. Wong, K. Konishi, K. Sasaki, K. Goto, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Kuramata, T. Masui, and S. Yamakoshi
Presentation: Jul. 5, A5-1, Oral.
35th Electronic Materials Symposium (EMS-35), Jul. 6-8, 2016, Laforet Biwako, Shiga
8)
High temperature growth of thick InGaN ternary alloy by tri-halide vapor phase epitaxy
N. Matsumoto, M. Meguro, K. Ema, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
Presentation: Jul. 7, Th2-6, Poster.
9)
(Invited) Recent progress in development of gallium oxide power devices
M. Higashiwaki, M. H. Wong, K. Konishi, K. Sasaki, K. Goto, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Kuramata, T. Masui, and S. Yamakoshi
Presentation: Jul. 8, Fr1-1, Oral.
墳梡暔棟妛夛墳梡揹巕暔惈暘壢夛 尋媶椺夛乽巁壔暔嵽椏偺婎慴暔惈偲偦偺墳梡乿, 2016擭7寧29擔, 庱搒戝妛搶嫗廐梩尨僒僥儔僀僩僉儍儞僷僗
10)
(Invited) 巁壔僈儕僂儉僷儚乕僨僶僀僗奐敪偺恑捇忬嫷
搶榚 惓崅, 儚儞 儅儞儂僀, 彫惣 宧懢, 嵅乆栘 岞暯, 屻摗 寬, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 儌僱儅乕 儃, 憅枖 楴恖, 嶳崢 栁怢
7寧29擔敪昞, 岥摢.
The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Aug. 7-12, 2016, Nagoya Congress Center, Nagoya, Japan
11)
(Invited) Progress of homoepitaxial growth technique of thick 兝-Ga2O3 layers by halide vapor phase epitaxy
Y. Kumagai, K. Nomura, K. Goto, Q.-T. Thieu, R. Togashi, K. Sasaki, K. Konishi, H. Murakami, A. Kuramata, S. Yamakoshi, B. Monemar, A. Koukitu, and M. Higashiwaki
Presentation: Aug. 9, Tu1-G04-1, Oral.
12)
(Invited) High-Speed Growth of Thick InGaN Ternary Alloy by Tri-Halide Vapor Phase Epitaxy
H. Murakami, T. Hirasaki, M. Meguro, Q.-T. Thieu, R. Togashi, Y. Kumagai, B. Monemar, and A. Koukitu
Presentation: Aug. 9, Tu3-T09-1, Oral.
13)
(Invited) Point Defect Management in Bulk AlN and AlGaN Epitaxial Films
R. Collazo, I. Bryan, Z. Bryan, D. Alden, S. Mita, B. E. Gaddy, J. Tweedie, A. Franke, R. Kirste, T. Kinoshita, Y. Kumagai, A. Koukitu, D. L. Irving, and Z. Sitar
Presentation: Aug. 10, We1-T09-1, Oral.
14)
(Invited) Growth of AlN substrates by hydride vapor phase epitaxy for opto-electronic devices
T. Kinoshita, T. Nagashima, T. Obata, R. Togashi, Y. Kumagai, R. Schlesser, R. Collazo, A. Koukitu, and Z. Sitar
Presentation: Aug. 10, We1-T09-2, Oral.
15)
Influence of growth rate at 1000oC on homoepitaxial growth of 兝-Ga2O3 (001) by halide vapor phase epitaxy
Y. Kozakai, K. Nomura, M. Takahashi, K. Goto, K. Sasaki, Q. T. Thieu, R. Togashi, H. Murakami, M. Higashiwaki, A. Kuramata, S. Yamakoshi, B. Monemar, and Y. Kumagai
Presentation: Aug. 11, Th1-T04-6, Oral.
German-Japanese Gallium Oxide Technology Meeting 2016, Sep. 7-9, 2016, Leibniz Institute for Crystal Growth (IKZ), Berlin, Germany
16)
(Invited) Thick and conductivity-controlled homoepitaxial growth of 兝-Ga2O3 layers by halide vapor phase epitaxy
Y. Kumagai, K. Goto, R. Togashi, H. Murakami, M. H. Wong, A. Kuramata, S. Yamakoshi, B. Monemar, and M. Higashiwaki
Presentation: Sep. 7, Oral.
17)
(Invited) Progress in Ga2O3 transistor and diode technologies
M. Higashiwaki, M. H. Wong, K. Konishi, K. Sasaki, K. Goto, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Kuramata, and S. Yamakoshi
Presentation: Sep. 9, Oral.
戞77夞墳梡暔棟妛夛廐婫妛弍島墘夛, 2016擭9寧13擔-16擔, 庨嶋儊僢僙
18)
(Invited) 巁壔僈儕僂儉僄僺乛婎斅奐敪偺恑揥
嵅乆栘 岞暯, 憅枖 楴恖, 憹堜 寶榓, 屻摗 寬, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 儌僱儅乕 儃, 搶榚 惓崅, 嶳崢 栁怢
9寧13擔敪昞, 13p-A22-4, 岥摢.
19)
1kV懴埑Ga2O3僼傿乕儖僪僾儗乕僩晅偒僔儑僢僩僉乕僶儕傾僟僀僆乕僪
彫惣 宧懢, 屻摗 寬, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, Bo Monemar, 憅枖 楴恖, 嶳崢 栁怢, 搶榚 惓崅
9寧15擔敪昞, 15a-B1-3, 岥摢.
11th European Conference on Silicon Carbide & Related Materials (ECSCRM 2016), Sep. 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece
20)
(Invited) Status and Potential of Gallium Oxide Devices - a New Candidate for Future Power Semiconductor Electronics
M. Higashiwaki, M. H. Wong, K. Konishi, K. Sasaki, K. Goto, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Kuramata, and S. Yamakoshi
Presentation: Sep. 26, Mo2a.01, Oral.
International Workshop on Nitride Semiconductors 2016 (IWN 2016), Oct. 2-7, 2016, Hilton Orlando Lake Buena Vista, Orlando, FL, U.S.A.
21)
(Invited) Recent Progress in the Growth of AlN by HVPE on Native AlN Substrates
Toru Kinoshita, Toru Nagashima, T. Obata, Rie Togashi, R. Schlesser, Ramon Collazo, Akinori Koukitu, Yoshinao Kumagai and Zlatko Sitar
Presentation: Oct. 4, A1.2.01, Oral.
22)
(Late News) Superior Thermal Resistance of N-Polar GaN Surface over Ga-Polar GaN Surface in NH3 added N2 Ambient at High Temperatures above 1200 oC
Y. Kisanuki, R. Togashi, S. Takashima, M. Edo, H. Murakami, A. Koukitu, and Y. Kumagai
Presentation: Oct. 5, D1.6.07, Oral.
墳梡暔棟妛夛寢徎岺妛暘壢夛 戞5夞寢徎岺妛枹棃弇, 2016擭11寧7擔, 搶嫗擾岺戝妛彫嬥堜僉儍儞僷僗
23)
HVPE朄AlN扨寢徎婎斅昞柺偺Si拁愊偺尨場挷嵏偍傛傃惂屼偺専摙
嵅摗 孿夘, 帥旜 恀恖, 嶰堜 懢楴, 嶳杮 楁弿, 晉妦 棟宐, 塱搰 揙, 栘壓 嫓, Baxter Moody, 懞忋 彯, Ramon Collazo, 銝銙 柧攲, Bo Monemar, Zlatko Sitar, 孎扟 媊捈
11寧7擔敪昞, 億僗僞乕6, 億僗僞乕.
24)
僴儔僀僪婥憡惉挿朄偵傛傞c-In2O3偺崅壏惉挿
徖揷 帄桪, 晉妦 棟宐, 椦揷 恀桼巕, 恵夑 棽擵, 屻摗 寬, 憅枖 楴恖, 嶳崢 栁怢, Plamen Paskov, Bo Monemar, 孎扟 媊捈
11寧7擔敪昞, 億僗僞乕8, 億僗僞乕.
25)
僩儕僴儔僀僪婥憡惉挿朄傪梡偄偨N嬌惈拏壔僈儕僂儉偺崅壏惉挿
堷揷 榓岹, 抾愳 捈, 徏揷 壺楡, 椦揷 捈恖, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
11寧7擔敪昞, 億僗僞乕37, 億僗僞乕.
撈棫峴惌朄恖擔杮妛弍怳嫽夛寢徎惉挿偺壢妛偲媄弍戞161埾堳夛 戞97夞尋媶夛乽僶儖僋儚僀僪僊儍僢僾敿摫懱寢徎乿, 2016擭11寧18擔, 戝嶃MEBIC愵挰
26)
(Invited) HVPE朄偵傛傞扨寢徎拏壔傾儖儈僯僂儉婎斅偺奐敪
塱搰 揙, 栘壓 嫓, 孎扟 媊捈, 銝銙 柧攲
11寧18擔敪昞, 岥摢.
2016 MRS Fall Meeting and Exhibit, Nov. 27 - Dec. 2, 2016, Hynes Convention Center, Boston, MA, U.S.A.
27)
Mg Ion Implantation Technology for Vertical Ga2O3 Power Devices
Man Hoi Wong, Ken Goto, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi, and Masataka Higashiwaki
Presentation: Nov. 29, EM11.3.04, Oral.
撈棫峴惌朄恖擔杮妛弍怳嫽夛寢徎惉挿偺壢妛偲媄弍戞161埾堳夛 戞98夞尋媶夛乽儚僀僪僊儍僢僾巁壔暔敿摫懱兝-Ga2O3寢徎惉挿丄寢徎昡壙丄僨僶僀僗墳梡乿, 2017擭1寧12擔-13擔, 挿昹儘僀儎儖儂僥儖
28)
(Invited) 僴儔僀僪婥憡惉挿朄偵傛傞扨寢徎兝-Ga2O3婎斅忋崅懍儂儌僄僺僞僉僔儍儖惉挿
孎扟 媊捈, 懞忋 彯, 屻摗 寬, 憅枖 楴恖, 搶榚 惓崅
1寧12擔敪昞, 岥摢.
44th Conference on the Physics & Chemistry of Surfaces & Interfaces (PCSI-44), Jan. 15-19, 2017, La Fonda Hotel, Santa Fe, NM, U.S.A.
29)
(Invited) Current State-of-the-Art of Gallium Oxide Power Device Technology
Masataka Higashiwaki, M. H. Wong, K. Konishi, K. Sasaki, K. Goto, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Kuramata, and S. Yamakoshi
Presentation: Jan. 18, PCSI-WeA10, Oral.
戞64夞墳梡暔棟妛夛弔婫妛弍島墘夛, 2017擭3寧14擔-17擔, 僷僔僼傿僐墶昹
30)
Mg Ion Implantation Technology for Vertical Ga2O3 Power Devices
Man Hoi Wong, Ken Goto, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi, Masataka Higashiwaki
3寧15擔敪昞, 15p-315-15, 岥摢.
31)
僷儚乕僨僶僀僗偵岦偗偨Ga2O3僂僄僴僾儘僙僗媄弍
憅枖 楴恖, 嫽 岞徦, 嵅乆栘 岞暯, 屻摗 寬, 搉曈 怣栫, 嶳壀 桪, 榚杮 戝庽, 僥傿儐 僋傽儞 僩僁, 憹堜 寶榓, 嶳崢 栁怢, 懞忋 彯, 孎扟 媊捈, 搶榚 惓崅
3寧16擔敪昞, 16p-502-8, 岥摢.
