暯惉27擭搙
International Conference on LED and Its Industrial Application '15 (LEDIA '15), Apr. 22-24, 2015, Pacifico Yokohama, Japan
1)
Growth of GaN on r-plane sapphire substrate by tri-halide vapor phase epitaxy
A. Shiono, N. Takekawa, H. Murakami, Y. Kumagai, and A. Koukitu
Presentation: Apr. 23, 23p-LEDp2-6, Poster.
2)
Calculation of thermochemical data for the growth of III-nitrides by vapor phase epitaxy
N. Takekawa, H. Murakami, Y. Kumagai, and A. Koukitu
Presentation: Apr. 23, 23p-LEDp2-15, Poster.
3)
Homoepitaxial growth of nitrogen doped ZnO thin layers by atmospheric pressure CVD using NO
Mayuko Hayashida, Rintaro Asakawa, Akihiko Hiroe, Song-Yun Kang, Rie Togashi, Hisashi Murakami, Yusaku Kashiwagi, Yoshinao Kumagai, and Akinori Koukitu
Presentation: Apr. 23, 23p-LEDp2-22,Poster.
4)
Thermal stability of group-III oxides in flows of H2 and N2
Y. Kisanuki, C. Eguchi, K. Nomura, K. Goto, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, A. Kuramata, B. Monemar, and A. Koukitu
Presentation: Apr. 23, 23p-LEDp2-23, Poster.
擔杮寢徎惉挿妛夛僫僲峔憿丒僄僺僞僉僔儍儖惉挿暘壢夛 戞7夞拏壔暔敿摫懱寢徎惉挿島墘夛, 2015擭5寧7擔-8擔, 搶杒戝妛曅暯僉儍儞僷僗
5)
僩儕僴儔僀僪婥憡惉挿朄傪梡偄偨InGaN惉挿偵偍偗傞NH3嫙媼暘埑偺塭嬁
暯嶈 婱塸, 挿扟愳 抭峃, 栚崟 旤嵅婬, 懞忋 彯, 孎扟 媊捈, Bo Monemar, 銝銙 柧攲
5寧8擔敪昞, Fr-17, 億僗僞乕.
墳梡暔棟妛夛寢徎岺妛暘壢夛 戞143夞尋媶夛乽怺巼奜屌懱敪岝僨僶僀僗奐敪丒墳梡偺嵟慜慄乿, 2015擭6寧5擔, 搶嫗搒巗戝妛悽揷扟僉儍儞僷僗
6)
(Invited) HVPE朄AlN婎斅忋巼奜LED偺奐敪
栘壓 嫓, 孎扟 媊捈, 堜忋 怳堦榊
6寧5擔敪昞, 岥摢.
73rd Device Research Conference (73rd DRC), Jun. 21-24, 2015, Ohio State University, Columbus,OH, U.S.A.
7)
Ga2O3 Schottky Barrier Diodes with n--Ga2O3 Drift Layers Grown by HVPE
Masataka Higashiwaki, Kohei Sasaki, Ken Goto, Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu, Akito Kuramata, and Shigenobu Yamakoshi
Presentation: Jun.22, Session 嘦-A, 嘦-A-2, Oral.
Compound Semiconductor Week 2015 (CSW 2015), Jun. 28 - Jul. 2, 2015, University of California Santa Barbara, CA, U.S.A.
8)
(Invited) Progress in Research and Development on Gallium Oxide Power Devices
Masataka Higashiwaki, Kohei Sasaki, Takafumi Kamimura, Man Hoi Wong, Ken Goto, Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu, Akito Kuramata, Takekazu Masui, and Shigenobu Yamakoshi
Presentation: Jun. 30, Tu3AD4.1, Oral.
墳梡暔棟妛夛愭恑僷儚乕敿摫懱暘壢夛 戞3夞尋媶夛乽師悽戙僷儚乕敿摫懱僨僶僀僗偺恑揥乿, 2015擭7寧9擔, 嶻憤尋偮偔偽惣帠嬈強 TIA楢実搹 TIA-nano儂乕儖
9)
(Invited) 巁壔僈儕僂儉僷儚乕僨僶僀僗婎斦媄弍偺奐敪
搶榚 惓崅, 嵅乆栘 岞暯, Man Hoi Wong, 忋懞 悞巎, 屻摗 寬, 栰懞 堦忛, Quang Tu Thieu, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, Bo Monemar, 銝銙 柧攲, 憅枖 楴恖, 憹堜 寶榓, 嶳崢 栁怢
7寧9擔敪昞, 岥摢.
10)
(Invited) HVPE朄偵傛傞n宆AlN婎斅偺奐敪
栘壓 嫓, 孎扟 媊捈
7寧9擔敪昞, 岥摢.
Workshop on Frontier Photonic and Electronic Materials and Devices, Jul. 11-14, 2015 , Kyoto University, Kyoto, Japan
11)
Growth of GaN and InGaN thick epitaxial layers by tri-halide vapor phase epitaxy
Hisashi Murakami, Takahide Hirasaki, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Kou Matsumoto, and Akinori Koukitu
Presentation: Jul. 13, Mo-12, Oral.
34th Electronic Materials Symposium (EMS-34), Jul. 15-17, 2015, Laforet Biwako, Shiga, Japan
12)
Dependences of input InCl3 ratio and growth temperature in InGaN growth by Tri-Halide Vapor Phase Epitaxy
Misaki Meguro, Takahide Hirasaki, Tomoyasu Hasegawa, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, and Akinori Koukitu
Presentation: Jul. 15, We1-15, Poster.
13)
Effect of NH3 Input Partial Pressure on InGaN Growth by Tri-Halide Vapor Phase Epitaxy
Takahide Hirasaki, Tomoyasu Hasegawa, Misaki Meguro, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, and Akinori Koukitu
Presentation: Jul. 15, We1-16, Poster.
14)
Thermodynamic and experimental studies on homoepitaxial growth of 兝-Ga2O3 by halide vapor phase epitaxy
Katsuaki Kawara, Kazushiro Nomura, Ken Goto, Kohei Sasaki, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, and Akinori Koukitu
Presentation: Jul. 15, We1-26, Poster.
戞76夞墳梡暔棟妛夛廐婫妛弍島墘夛, 2015擭9寧13擔-16擔, 柤屆壆崙嵺夛媍応
15)
僩儕僴儔僀僪婥憡惉挿朄傪梡偄偨InGaN岤枌惉挿
暯 婱塸, 栚崟 旤嵅婬, 僥傿儐 僋傽儞 僩僁, 懞忋 彯, 孎扟 媊捈, Bo Monemar, 銝銙 柧攲
9寧13擔敪昞, 13p-1D-11, 岥摢.
16)
HVPE朄偵傛傞n宆AlN婎斅嶌惢偲廲宆僔儑僢僩僉乕僟僀僆乕僪傊偺揔梡
嶳杮 楁弿, 栘壓 嫓, 塱搰 揙, 彫敠 弐擵, 崅搰 怣栫, 晉妦 棟宐, 孎扟 媊捈, Raoul Schlesser, Ramon Collazo, 銝銙 柧攲, Zlatko Sitar
9寧13擔敪昞, 13p-1D-13, 岥摢.
17)
III懓巁壔暔寢徎偺擬揑埨掕惈偺斾妑
晉妦 棟宐, 栰懞 堦忛, 峕岥 愮恞, 栘嵅娧 桾旤, 屻摗 寬, Quang Tu Thieu, 懞忋 彯, 孎扟 媊捈, 憅枖 楴恖, 嶳崢 栁怢, Bo Monemar, 銝銙 柧攲
9寧15擔敪昞, 15a-1B-8, 岥摢.
18)
僴儔僀僪婥憡惉挿朄偵傛傞Si僪乕僾n宍兝-Ga2O3(001)岤枌偺儂儌僄僺僞僉僔儍儖惉挿
栰懞 堦忛, 屻摗 寬, 嵅乆栘 岞暯, 僥傿儐 僋傽儞 僩僁, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 搶榚 惓崅, 憅枖 楴恖, 嶳崢 栁怢, Bo Monemar, 銝銙 柧攲
9寧16擔敪昞, 16p-4C-5, 岥摢.
19)
HVPE惉挿偟偨僪儕僼僩憌傪桳偡傞Ga2O3僔儑僢僩僉乕僶儕傾僟僀僆乕僪
搶榚 惓崅, 嵅乆栘 岞暯, 彫惣 宧懢, 屻摗 寬, 栰懞 堦忛, Quang Tu Thieu, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, Bo Monemar, 銝銙 柧攲, 憅枖 楴恖, 嶳崢 栁怢
9寧16擔敪昞, 16p-4C-6, 岥摢.
20)
HVPE惉挿偟偨G2O3僔儑僢僩僉乕僶儕傾僟僀僆乕僪偺僨僶僀僗摿惈壏搙埶懚惈
彫惣 宧懢, 嵅乆栘 岞暯, 屻摗 寬, 栰懞 堦忛, Quang Tu Thieu, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, Bo Monemar, 銝銙 柧攲, 憅枖 楴恖, 嶳崢 栁怢, 搶榚 惓崅
9寧16擔敪昞, 16p-4C-7, 岥摢.
21)
僼傿乕儖僪僾儗乕僩揹嬌廔抂峔憿傪愝偗偨兝-Ga2O3僔儑僢僩僉乕僶儕傾僟僀僆乕僪
嵅乆栘 岞暯, 搶榚 惓崅, 屻摗 寬, 栰懞 堦忛, Quang Tu Thieu, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, Bo Monemar, 銝銙 柧攲, 憅枖 楴恖, 嶳崢 栁怢
9寧16擔敪昞, 16p-4C-8, 岥摢.
2015 E-MRS Fall Meeting and Exhibit, Sep. 15-18, 2015, Warsaw University of Technology, Warsaw, Poland
22)
(Invited) HVPE growth of AlN substrates for opto-electronic applications
Toru Kinoshita, Toru Nagashima, Toshiyuki Obata, Shinya Takashima, Reo Yamamoto, Rie Togashi, Yoshinao Kumagai, Raoul Schlesser, Ramón Collazo, Akinori Koukitu, and Zlatko Sitar
Presentation: Sep. 16, H.2, Oral.
2015 International Conference on Solid State Devices and Materials (SSDM 2015), Sep. 27-30, 2015, Sapporo Convention Center, Sapporo, Japan
23)
First Demonstration of 兝-Ga2O3 Schottky Barrier Diode with Field Plate Edge Termination
K. Sasaki, M. Higashiwaki, K. Goto, K. Nomura, Q.T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata and S. Yamakoshi
Presentation: Sep. 29, M-5-4, Oral.
撈棫峴惌朄恖擔杮妛弍怳嫽夛儚僀僪僊儍僢僾敿摫懱岝丒揹巕僨僶僀僗戞162埾堳夛敄枌 戞131埾堳夛崌摨尋媶夛乽僄僱儖僊乕儅僱乕僕儊儞僩僨僶僀僗乿, 2015擭10寧2擔, 嫗搒儕僒乕僠僷乕僋
24)
(Invited) Ga2O3僷儚乕僨僶僀僗奐敪偺尰忬偲壽戣
搶榚 惓崅, 嵅乆栘 岞暯, 彫惣 宧懢, Man Hoi Wong, 屻摗 寬, 栰懞 堦忛, Quang Tu Thieu, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, Bo Monemar, 銝銙 柧攲, 憅枖 楴恖, 憹堜 寶榓, 嶳崢 栁怢
10寧2擔敪昞, 岥摢.
Workshop on Oxide Electronics 22 (WOE 22), Oct. 7-9, 2015, College de France, Paris, France
25)
(Invited) Gallium Oxide Devices for Next Revolution in Power Electronics
M. Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, K. Konishi, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi
Presentation: Oct. 8, Oral.
37th IEEE Compound Semiconductor IC Symposium (CSICS 37), Oct. 11-14, 2015, Sheraton New Orleans Hotel, LA, U.S.A.
26)
(Invited) Current Status of Gallium Oxide-Based Power Device Technology
M. Higashiwaki, K. Sasaki, M. H. Wong, T. Kamimura, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi
Presentation: Oct. 13, K.1, Oral.
戞45夞寢徎惉挿崙撪夛媍乮NCCG-45乯, 2015擭10寧19擔-21擔, 杒奀摴戝妛妛弍岎棳夛娰
27)
Si僪乕僾巁壔僈儕僂儉岤枌偺HVPE儂儌僄僺僞僉僔儍儖惉挿
栰懞 堦忛, 屻摗 寬, 嵅乆栘 岞暯, 僥傿儐 僋傽儞 僩僁, 晉妦 棟宐, 懞忋 彯, 搶榚 惓崅, 憅枖 楴恖, 嶳崢 栁怢, Bo Monemar, 銝銙 柧攲, 孎扟媊捈
10寧19擔敪昞, 19pB08, 岥摢.
28)
HVPE朄偵傛傞Si僪乕僾n宍AlN婎斅嶌惢偲廲宆僔儑僢僩僉乕僶儕傾僟僀僆乕僪帋嶌傊偺揔梡
帥旜 恀恖, 嶳杮 楁弿, 栘壓 嫓, 塱搰 揙, 彫敠 弐擵, 崅搰 怣栫, 晉妦 棟宐, 懞忋 彯, Raoul Schlesser, Ramón Collazo, 銝銙 柧攲, Bo Monemar, Zlatko Sitar, 孎扟 媊捈
10寧20擔敪昞, 20PS15, 億僗僞乕.
墳梡暔棟妛夛寢徎岺妛暘壢夛 戞4夞寢徎岺妛枹棃弇, 2015擭10寧29擔, 搶嫗擾岺戝妛彫嬥堜僉儍儞僷僗
29)
HVPE朄AlN崅壏惉挿偵偍偗傞婎斅徃崀壏帪偺楩撪暤埻婥偑昞柺偵梌偊傞塭嬁
嵅摗 孿夘, 帥旜 恀恖, 搶忛 弐夘, 揷拞 椊暯, 晉妦 棟宐, 塱搰 揙, 栘壓 嫓, Baxter Moody, Ramón Collazo, 懞忋 彯, 銝銙 柧攲, Zlatko Sitar, 孎扟 媊捈
10寧29擔敪昞, 億僗僞乕05, 億僗僞乕.
30)
堦巁壔拏慺傪梡偄偨忢埑CVD朄偵傛傞N僪乕僾ZnO敄枌偺儂儌僄僺僞僉僔儍儖惉挿
椦揷 恀桼巕, 熐愳 椣懢榊, 淎峕 徍旻, 峃徏 弫, 晉妦 棟宐, 懞忋 彯, 攼栘 桬嶌, 銝銙 柧攲, 孎扟 媊捈
10寧29擔敪昞, 億僗僞乕07, 億僗僞乕.
31)
Si僪乕僾n宍HVPE-AlN僶儖僋婎斅偺嶌惢偲廲宆僔儑僢僩僉乕僶儕傾僟僀僆乕僪嶌惢傊偺揔梡
帥旜 恀恖, 嶳杮 楁弿, 栘壓 嫓, 塱搰 揙, 彫敠 弐擵, 崅搰 怣栫, 晉妦 棟宐, 懞忋 彯, Raoul Schlesser, Ramón Collazo, 銝銙 柧攲, Bo Monemar, Zlatko Sitar, 孎扟 媊捈
10寧29擔敪昞, 億僗僞乕08, 億僗僞乕.
32)
SiCl4摨帪嫙媼偵傛傞Si僪乕僾n宍儂儌僄僺僞僉僔儍儖兝-Ga2O3(001)岤枌偺HVPE惉挿
彫嶄 桪恖, 栰懞 堦忛, 壨尨 崕柧, 屻摗 寶, 嵅乆栘 岞暯, 僥傿儐 僋傽儞 僩僁, 晉妦 棟宐, 懞忋 彯, 搶榚 惓崅, 憅枖 楴恖, 嶳崢 栁怢, Bo Monemar, 銝銙 柧攲, 孎扟 媊捈
10寧29擔敪昞, 億僗僞乕25, 億僗僞乕.
33)
僩儕僴儔僀僪婥憡惉挿朄偵傛傞In慻惉5%偺InGaN岤枌(>10兪m)惉挿
栚崟 旤嵅婬, 暯 婱塸, 挿扟愳 抭峃, 僥傿儐 僋傽儞 僩僁, 懞忋 彯, 孎扟 媊捈, Bo Monemar, 銝銙 柧攲
10寧29擔敪昞, 億僗僞乕27, 億僗僞乕.
9th International Workshop on Bulk Nitride Semiconductors (IWBNS-IX), Nov. 2-6, 2015,Hansol Oak Valley, Wonju, Korea
34)
(Invited) Tri-Halide Vapor Phase Epitaxy of Thick GaN and InGaN Layers
Hisashi Murakami, Takahide Hirasaki, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Kou Matsumoto and Akinori Koukitu
Presentation: Nov. 4, Oral.
35)
(Invited) Thick (>10 m) and High Crystalline Quality InGaN Growth on GaN(0001) Substrate by Tri-Halide Vapor Phase Epitaxy
Takahide Hirasaki, Tomoyasu Hasegawa, Misaki Meguro, Quang Tu Thieu, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar and Akinori Koukitu
Presentation: Nov. 4, Oral.
International Workshop on Gallium Oxide and Related Materials 2015 (IWGO 2015), Nov. 3-6, 2015, Kyoto University, Kyoto, Japan
36)
Comparative Study on Thermal Stability of Group-III Oxides
R. Togashi, K. Nomura, C. Eguchi, Y. Kisanuki, K. Goto, Q. T. Thieu, H. Murakami, Y. Kumagai, A. Kuramata, S. Yamakoshi, B. Monemar, and A. Koukitu
Presentation: Nov. 4, E11, Poster. 亙Young Researcher Paper Award亜
37)
Anisotropy, phonon modes and band-to-band transitions in single-crystal monoclinic beta-Ga2O3 determined by THz to VUV generalized ellipsometry
M. Schubert, R. Korlacki, S. Schoeche, V. Darakchieva, B. Monemar, K. Goto, K. Nomura, H. Murakami, Q.-T. Thieu, R. Togashi, Y. Kumagai, A. Kuramata, M. Higashiwaki, A. Koukitu, S. Yamakoshi, E. Janzén, D. Gogova, M. Schmidbauer, and Z. Galazka
Presentation: Nov. 4, E20, Poster.
38)
Si Doping of 兝-Ga2O3 in Halide Vapor Phase Epitaxy and its Electrical Properties
K. Goto, K. Nomura, H. Murakami, Q. T. Thieu, R. Togashi, Y. Kumagai, A. Kuramata, B. Monemar, A. Koukitu, and S. Yamakoshi
Presentation: Nov. 5, G4, Oral.
39)
Temperature-Dependent Device Characteristics of HVPE-Grown Ga2O3 Schottky Barrier Diodes
K. Konishi, K. Sasaki, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, S. Yamakoshi, and M. Higashiwaki
Presentation: Nov. 5, H4, Oral.
40)
Optical Properties of Doped and Intrinsic 兝-Ga2O3
I. G. Ivanov, K. Goto, K. Nomura, H. Murakami, Q.-T. Thieu, R. Togashi, Y. Kumagai, A. Kuramata, M. Higashiwaki, A. Koukitu, S. Yamakoshi, E. Janzén and B. Monemar
Presentation: Nov. 6, I4, Oral.
41)
EPR studies of defects in 兝-Ga2O3
N. T. Son, K. Goto, K. Nomura, H. Murakami, Q. T. Thieu, R. Togashi, Y. Kumagai, A. Kuramata, M. Higashiwaki, A. Koukitu, S. Yamakoshi, B. Monemar and E. Janzén
Presentation: Nov. 6, I6, Oral.
The 6th International Symposium on Growth of III-Nitrides (ISGN-6), Nov. 8-13, 2015, Act City Hamamatsu, Japan
42)
Influence of NH3 Input Partial Pressure on N-Polarity InGaN Growth by Tri-Halide Vapor Phase Epitaxy
Takahide Hirasaki, Tomoyasu Hasegawa, Misaki Meguro, Quang Tu Thieu, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar and Akinori Koukitu
Presentation: Nov. 10, Tu-A11, Poster.
43)
Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy
R. Yamamoto, T. Kinoshita, T. Nagashima, T. Obata, S. Takashima, R. Togashi, Y. Kumagai, R. Schlesser, R. Collazo, A. Koukitu, and Z. Sitar
Presentation: Nov. 10, Tu-B51, Poster.
44)
Properties of point defects in AlN and high Al content AlGaN
Benjamin E. Gaddy, Zachary Bryan, Isaac Bryan, Joshua S. Harris, Kelsey J. Mirrielees, Brian D. Behrhorst, Jonathon N. Baker, Ronny Kirste, Toru Kinoshita, Yoshinao Kumagai, Akinori Koukitu, Ramón Collazo, Zlatko Sitar, Douglas L. Irving
Presentation: Nov. 10, Tu-B62, Poster.
45)
Analysis of formation mechanism of AlN whiskers on sapphire surfaces at elevated temperature in a mixed flow of H2 and N2
K. Takada, K. Nomura, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
Presentation: Nov. 11, We-A40, Poster.
2015 MRS Fall Meeting and Exhibit, Nov. 29 - Dec. 4, 2015, Hynes Convention Center, Boston, MA, U.S.A.
46)
Homoepitaxial Growth of Si-Doped Thick (001) 兝-Ga2O3 Layers by Halide Vapor Phase Epitaxy
Hisashi Murakami, Kazushiro Nomura, Ken Goto, Kohei Sasaki, Quang T. Thieu, Rie Togashi, Yoshinao Kumagai, Keita Konishi, Masataka Higashiwaki, Akito Kuramata, Shigenobu Yamakoshi, Bo A. Monemar and Akinori Koukitu
Presentation: Dec. 1, RR3.01, Oral.
18th International Workshop on Physics of Semiconductor Devices (IWPSD 2015), Dec. 7-10, 2015, Indian Institute of Science, Bangalore, India
47)
(Invited) The Challenges of Gallium Oxide Devices for Future Power Electronics
M. Higashiwaki, K. Sasaki, M. H. Wong, K. Konishi, T. Kamimura, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A. Kuramata, T. Masui, and S. Yamakoshi
Presentation: Dec. 8, Oral.
2015 Collaborative Conference on Crystal Growth (3CG 2015), Dec. 14-17, 2015, Eaton Hotel, Hong Kong, China
48)
(Invited) Growth of Thick InGaN and GaN by Tri-Halide Vapor Phase Epitaxy with High Rate
Hisashi Murakami, Takahide Hirasaki, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Akinori Koukitu
Presentation: Dec. 15, D17, Oral.
49)
(Invited) High speed growth of InN by HVPE realized by controlled generation of InCl3
Rie Togashi, Quang Tu Thieu, Hisashi Murakami, Yoshihiro Ishitani, Bo Monemar, Akinori Koukitu, Yoshinao Kumagai
Presentation: Dec. 15, D20, Oral.
2016 Photonics West, Feb. 13-18, 2016, The Moscone Center, San Francisco, CA, U.S.A.
50)
(Invited) High rate InN growth by two-step precursor generation hydride vapor phase epitaxy
Rie Togashi, Quang Tu Thieu, Hisashi Murakami, Yoshihiro Ishitani, Bo Monemar, Akinori Koukitu, Yoshinao Kumagai
Presentation: Feb. 15, 9748-10, Oral.
戞63夞墳梡暔棟妛夛弔婫妛弍島墘夛, 2016擭3寧19擔-22擔, 搶嫗岺嬈戝妛戝壀嶳僉儍儞僷僗
51)
HVPE朄偵傛傞In2O3惉挿偺専摙
徖揷 帄桪, 晉妦 棟宐, 屻摗 寬, 懞忋 彯, 憅枖 楴恖, 嶳崢 栁怢, 孎扟 媊捈
3寧21擔敪昞, 21a-S222-9, 岥摢.
