暯惉26擭搙
International Conference on LED and Its Industrial Application '14 (LEDIA '14), Apr. 22-24, 2014, Pacifico Yokohama, Japan
1)
Surface orientation dependence of the In-incorporation of THVPE-grown InGaN studied by first principles and statistical thermodynamics
Hisashi Murakami, Yu Fujimura, Rie Togashi, Yoshinao Kumagai, Akinori Koukitu
Presentation: Apr. 23, 23p-LED4-9, Oral.
2)
Growth of homoepitaxial ZnO thin layers by halide vapor phase epitaxy using non-hydrogenous sources
Rintaro Asakawa, Yuta Isa, Naoto Kanzaki, Song-Yun Kang, Akihiko Hiroe, Rie Togashi, Hisashi Murakami, Yusaku Kashiwagi, Yoshinao Kumagai, and Akinori Koukitu
Presentation: Apr. 24, 24p-LEDp6-4, Poster.
3)
Thermal stability of 兝-Ga2O3 substrates in mixed flows of H2 and N2
C. Eguchi, T. Fukizawa, S. Hanagata, K. Nomura, K. Goto, R. Togashi, H. Murakami, A. Kuramata, Y. Kumagai, and A. Koukitu
Presentation: Apr. 24, 24p-LEDp6-6, Poster.
4)
High-speed InN growth on yttria-stabilized zirconia (111) substrates by a two-step precursor generation HVPE system
C. Kojima, R. Togashi, R. Imai, N. Fujita, H. Saito, H. Murakami, Y. Kumagai, and A. Koukitu
Presentation: Apr. 24, 24p-LEDp6-16, Poster.
The 5th International Symposium on Growth of III-Nitrides (ISGN-5), May. 18-22, 2014, The Westin Peachtree Plaza, Atlanta, Georgia, U.S.A.
5)
(Invited) Hydride Vapor Phase Epitaxy and Doping of AlN
Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Baxter Moody, Rie Togashi, Hisashi Murakami, Ramon Collazo, Akinori Koukitu and Zlatko Sitar
Presentation: May. 19, B2, Oral.
6)
Temperature Dependence of InN Growth on Nitrided Yttria-Stabilized Zirconia (111) Substrates Using a Novel HVPE System
Rie Togashi, Chie Kojima, Naoto Fujita, Hironobu Saito, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
Presentation: May. 20, G3, Oral.
7)
(Invited) Deep UV-LEDs Fabricated of on HVPE-AlN Substrates
Toru Kinoshita, Toshiyuki Obata, Toru Nagashima, Hiroyuki Yanagi, Baxter Moody, Ramon Collazo, Shin-ichiro Inoue, Yoshinao Kumagai, Akinori Koukitu and Zlatko Sitar
Presentation: May. 21, K1, Oral.
33rd Electronic Materials Symposium (EMS-33), Jul. 9-11, 2014, Laforet Shuzenji, Izu
8)
Influence of Growth Temperature on InGaN Growth by Tri-Halide Vapor Phase Epitaxy
Takahide Hirasaki, Yuta Watanabe, Masato Ishikawa, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
Presentation: Jul. 10, Th3-13, Poster.
9)
Theoretical investigation of the influence of surface orientation on In-incorporation during InGaN growth using THVPE
Yu Fujimura, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
Presentation: Jul. 10, Th3-14 Poster.
10)
Selective growth of InN on patterned GaAs(110) substrate by MOVPE
Hisashi Murakami, Yusuke Kitai, Thieu Quan Tu, Yoshinao Kumagai, and Akinori Koukitu
Presentation: Jul. 10, Th3-19, Poster.
11)
Estimation of thermochemical data for the growth of group-III nitrides by the combination of first principles and statistical thermodynamic
Nao Takekawa, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
Presentation: Jul. 10, Th3-21, Poster.
17th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-17), Jul. 13-18, 2014, EPFL, Lausanne, Switzerland
12)
(Plenary Talk) MOCVD growth of AlGaN alloy for DUV-LEDs
T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, B. Moody, S. Inoue, Y. Kumagai, A. Koukitu, R. Collazo, and Z. Sitar
Presentation: Jul. 15, Tue-Plenary-2, Oral.
擔杮寢徎惉挿妛夛僫僲峔憿丒僄僺僞僉僔儍儖惉挿暘壢夛 戞6夞拏壔暔敿摫懱寢徎惉挿島墘夛, 2014擭7寧25擔-26擔, 柤忛戝妛揤敀僉儍儞僷僗
13)
乮僠儏乕僩儕傾儖島墘乯 HVPE朄偵傛傞AlN扨寢徎帺棫婎斅偺嶌惢偲偦偺僨僶僀僗墳梡
孎扟 媊捈, 塱搰 揙, 栘壓 嫓, 懞忋 彯, 銝銙 柧攲
7寧25擔敪昞, T-Fr-1, 岥摢.
14)
戞堦尨棟寁嶼偲摑寁椡妛傪梡偄偨III懓拏壔暔偺惉挿偵偍偗傞擬壔妛僨乕僞偺嶼弌
抾愳 捈, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
7寧25擔敪昞, Fr-3, 億僗僞乕.
15)
III懓巁壔暔扨寢徎婎斅偺悈慺丒拏慺暤埻婥壓暘夝偺擬椡妛夝愅
峕岥 愮恞, 暀郪 岶峢, 栰懞 堦忛, 屻摗 寬, 晉妦 棟宐, 懞忋 彯, 憅枖 楴恖, 孎扟 媊捈, 銝銙 柧攲
7寧25擔敪昞, Fr-5, 億僗僞乕.
16)
AlN 崅壏HVPE惉挿偵偍偗傞婎斅徃崀壏僾儘僙僗偑昞柺偵梌偊傞塭嬁
搶忛 弐夘, 揷拞 椊暯, 妟夑 弐惉, 晉妦 棟宐, 塱搰 揙, 栘壓 嫓, Baxter Moody, 懞忋 彯, Ramon Collazo, 孎扟 媊捈, 銝銙 柧攲, Zlatko Sitar
7寧25擔敪昞, Fr-16, 億僗僞乕.
17)
AlN/sapphire僥儞僾儗乕僩忋傊偺Si僪乕僾AlN憌偺HVPE惉挿偺専摙
揷拞 椊暯, 搶忛 弐夘, 妟夑 弐惉, 晉妦 棟宐, 塱搰 揙, 栘壓 嫓, Baxter Moody, 懞忋 彯, Ramon Collazo, 孎扟 媊捈, 銝銙 柧攲, Zlatko Sitar
7寧25擔敪昞, Fr-17, 億僗僞乕.
18)
慜嬱懱擇抜奒惗惉HVPE朄偵傛傞崅懍丒崅壏InN惉挿
晉妦 棟宐, 彫搰 愮宐, 摗揷 捈恖, 惸摗 峀怢, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
7寧25擔敪昞, Fr-18, 億僗僞乕.
亙尋媶彠椼徿庴徿亜
徿忬
19)
僩儕僴儔僀僪婥憡惉挿朄傪梡偄偨r柺僒僼傽僀儎婎斅忋傊偺GaN惉挿
墫栰 埱撧, 抾愳 捈, 摗懞 樞, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
7寧25擔敪昞, Fr-22, 億僗僞乕.
International Workshop on Nitride Semiconductors 2014 (IWN2014), Aug. 24-29, 2014, Centennial Hall, Wrocław, Poland
20)
High-Speed Hydride Vapor Phase Epitaxy of InN on Nitrided Yttria-Stabilized Zirconia (111) Substrates
C. Kojima, R. Togashi, H. Murakami, Y. Kumagai and A. Koukitu
Presentation: Aug. 25, MoGO9, Oral.
21)
(Invited) Growth of AlN by Hydride Vapor Phase Epitaxy
Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Baxter Moody, Rie Togashi, Hisashi Murakami, Ramón Collazo, Akinori Koukitu and Zlatko Sitar
Presentation: Aug. 26, TuGI2, Oral.
22)
Growth of Si-Doped AlN Layers by Hydride Vapor Phase Epitaxy
R. Tanaka, S. Tojo, T. Nukaga, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, Y. Kumagai, A. Koukitu and Z. Sitar
Presentation: Aug. 26, TuGO3, Oral.
23)
Investigation of Ambient Gas after High-Temperature Growth of AlN by Hydride Vapor Phase Epitaxy
S. Tojo, R. Tanaka, T. Nukaga, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, Y. Kumagai, A. Koukitu and Z. Sitar
Presentation: Aug. 26, TuGP15, Poster.
24)
Selective nucleation of semi-polar InN on patterned GaAs(110) substrate by MOVPE
Hisashi Murakami, Yusuke Kitai, Thieu Quan Tu, Yoshinao Kumagai and Akinori Koukitu
Presentation: Aug. 26, TuGP62, Poster.
25)
Thermal Stability of Group-III Oxides in Mixed Flows of H2 and N2 for Growth of Group-III Nitrides
C. Eguchi, T. Fukizawa, K. Nomura, K. Goto, R. Togashi, H. Murakami, A. Kuramata, Y. Kumagai and A. Koukitu
Presentation: Aug. 27, WeGP4, Poster.
26)
Characterizing the role of point defects and complexes in UV absorption and emission in AlN
Benjamin E. Gaddy, Zachary A. Bryan, Isaac S. Bryan, Ronny Kirste, Jinqiao Xie, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, Ramon Collazo, Zlatko Sitar and Douglas L. Irving
Presentation: Aug. 27, WeBP67, Poster.
戞75夞墳梡暔棟妛夛廐婫妛弍島墘夛, 2014擭9寧17擔-20擔, 杒奀摴戝妛嶥杫僉儍儞僷僗
27)
AlN偺HVPE崅壏儂儌僄僺僞僉僔儍儖惉挿偵偍偗傞婎斅徃崀壏帪昞柺楎壔偺尨場
搶忛 弐夘, 揷拞 椊暯, 妟夑 弐惉, 晉妦 棟宐, 塱搰 揙, 栘壓 嫓, Baxter Moody, 懞忋 彯, Ramon Collazo, 孎扟 媊捈, 銝銙 柧攲, Zlatko Sitar
9寧17擔敪昞, 17p-C5-9, 岥摢.
28)
慜嬱懱擇抜奒惗惉HVPE朄偵傛傞拏壔僀僢僩儕傾埨掕壔僕儖僐僯傾(111)婎斅忋傊偺崅懍InN惉挿
彫搰 愮宐, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
9寧17擔敪昞, 17p-C5-13, 岥摢.
29)
乮墳梡暔棟妛夛桪廏榑暥徿庴徿婰擮島墘乯 Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy
栘壓 嫓, 彫敠 弐擵, 塱搰 揙, 桍 桾擵, Baxter Moody, 嶰揷 惔擇, 堜忋 怳堦榊, 孎扟 媊捈, 銝銙 柧攲, Zlatko Sitar
9寧18擔敪昞, 18p-C5-1, 岥摢.
徿忬
30)
僴儔僀僪婥憡惉挿朄偵傛傞巁壔僈儕僂儉惉挿偺擬椡妛夝愅
栰懞 堦忛, 屻摗 寬, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 憅枖 楴恖, 嶳崢 栁怢, 銝銙 柧攲
9寧19擔敪昞, 19p-A12-8, 岥摢.
撈棫峴惌朄恖擔杮妛弍怳嫽夛儚僀僪僊儍僢僾敿摫懱岝丒揹巕僨僶僀僗戞162埾堳夛 戞91夞尋媶夛乽巁壔暔嵽椏偺嵟嬤偺恑揥乿, 2014擭9寧26擔, 嫗搒戝妛搶嫗僆僼傿僗
31)
(Invited) 巁壔暔敿摫懱ZnO偍傛傃Ga2O3偺HVPE惉挿
孎扟 媊捈
9寧26擔敪昞, 岥摢.
戞44夞寢徎惉挿崙撪夛媍乮NCCG-44乯, 2014擭11寧6擔-8擔, 妛廗堾憂棫昐廃擭婰擮夛娰
32)
悈慺丒拏慺暤埻婥壓偵偍偗傞Ga2O3暘夝偺専摙
晉妦 棟宐, 栰懞 堦忛, 峕岥 愮恞, 暀郪 岶峢, 屻摗 寬, 懞忋 彯, 孎扟 媊捈, 憅枖 楴恖, 嶳崢 栁怢, 銝銙 柧攲
11寧7擔敪昞, 07aD01, 岥摢.
33)
HVPE朄傪梡偄偨兝-Ga2O3寢徎惉挿偺擬椡妛夝愅
栰懞 堦忛, 屻摗 寬, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 憅枖 楴恖, 嶳崢 栁怢, 銝銙 柧攲
11寧7擔敪昞, 07aD02, 岥摢.
34)
堦巁壔拏慺傪梡偄偨忢埑CVD朄偵傛傞ZnO:N敄枌偺惉挿
熐愳 椣懢榊, 恄嶈 捈恖, 椦揷 恀桼巕, 淎峕 徍旻, 峃徏 弫, 晉妦 棟宐, 懞忋 彯, 攼栘 桬嶌, 孎扟 媊捈, 銝銙 柧攲
11寧7擔敪昞, 07aD03, 岥摢.
墳梡暔棟妛夛寢徎岺妛暘壢夛 戞3夞寢徎岺妛枹棃弇, 2014擭11寧13擔, 妛廗堾憂棫昐廃擭婰擮夛娰
35)
僩儕僴儔僀僪婥憡惉挿朄偵傛傞InGaN惉挿偵偍偗傞惉挿壏搙偺塭嬁
挿扟愳 抭峃, 暯嶈 婱塸, 搉曈 梇懢, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
11寧13擔敪昞, 億僗僞乕02, 億僗僞乕.
36)
HVPE朄偵傛傞AlN/sapphire僥儞僾儗乕僩忋傊偺Si僪乕僾AlN惉挿偺専摙
揷拞 椊暯, 搶忛 弐夘, 妟夑 弐惉, 晉妦 棟宐, 塱搰 揙, 栘壓 嫓, Baxter Moody, 懞忋 彯, Ramon Collazo, 孎扟 媊捈, 銝銙 柧攲, Zlatko Sitar
11寧13擔敪昞, 億僗僞乕16, 億僗僞乕.
亙寢徎岺妛暘壢夛敪昞彠椼徿庴徿亜徿忬37)
拏壔僀僢僩儕傾埨掕壔僕儖僐僯傾(111)婎斅忋傊偺慜嬱懱擇抜奒惗惉HVPE朄偵傛傞崅懍InN惉挿
彫搰 愮宐, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
11寧13擔敪昞, 億僗僞乕20, 億僗僞乕.
38)
GaCl-O2宯HVPE朄偵傛傞兝-Ga2O3惉挿偺擬椡妛夝愅
栰懞 堦忛, 屻摗 寬, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 憅枖 楴恖, 嶳崢 栁怢, 銝銙 柧攲
11寧13擔敪昞, 億僗僞乕21, 億僗僞乕.
39)
悈慺丒拏慺暤埻婥壓偵偍偗傞III懓巁壔暔婎斅埨掕惈偺擬椡妛揑挷嵏
峕岥 愮恞, 暀郪 岶峢, 栰懞 堦忛, 屻摗 寬, 晉妦 棟宐, 懞忋 彯, 憅枖 楴恖, 孎扟 媊捈, 銝銙 柧攲
11寧13擔敪昞, 億僗僞乕22, 億僗僞乕.
40)
僴儔僀僪婥憡惉挿朄偵傛傞兝-Ga2O3偺儂儌僄僺僞僉僔儍儖惉挿
壨尨 崕柧, 栰懞 堦忛, 屻摗 寬, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 憅枖 楴恖, 嶳崢 栁怢, 銝銙 柧攲
11寧13擔敪昞, 億僗僞乕24, 億僗僞乕.
2014 MRS Fall Meeting and Exhibit, Nov. 30 - Dec. 5, 2014, Hynes Convention Center, Boston, MA, U.S.A.
41)
(Invited) Homo-Epitaxial Growth of High-Purity Films of 兝-Ga2O3 and ZnO by Halide Vapor Phase Epitaxy
Yoshinao Kumagai, Rie Togashi, Hisashi Murakami and Akinori Koukitu,
Presentation: Dec. 1, O2.01, Oral.
42)
Halide Vapor Phase Epitaxy of 兝-Ga2O3 Films on (001) 兝-Ga2O3 Substrate
Hisashi Murakami, Kazushiro Nomura, Ken Goto, Katsuaki Kawara, Rie Togashi, Yoshinao Kumagai, Akito Kuramata, Shigenobu Yamakoshi and Akinori Koukitu
Presentation: Dec. 1, O2.02, Oral.
43)
Predicted Properties of Point Defects and Complexes in AlN and AlGaN
Benjamin E. Gaddy, Zachary Bryan, Isaac Bryan, Ronny Kirste, Jinqiao Xie, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, Ramon Collazo, Zlatko Sitar and Douglas L. Irving
Presentation: Dec. 4, T12.02, Oral.
撈棫峴惌朄恖擔杮妛弍怳嫽夛儚僀僪僊儍僢僾敿摫懱岝丒揹巕僨僶僀僗戞162埾堳夛 戞92夞尋媶夛乽儚僀僪僊儍僢僾岝僨僶僀僗偺嵟嬤偺恑揥偲墳梡乿, 2014擭12寧12擔-13擔, 搶儗嶰搰憤崌尋廋僙儞僞乕
44)
(Invited) HVPE朄AlN婎斅忋巼奜LED
栘壓 嫓, 孎扟 媊捈, 堜忋 怳堦榊
12寧13擔敪昞, 7, 岥摢.
10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014), Dec. 14-19, 2014, Sizihwan Bay, National Sun Yat-Sen University, Kaohsiung, Taiwan
45)
Homoepitaxial Growth of ZnO Thin Layers by Halide Vapor Phase Epitaxy using Hydrogen-Free Sources
Rintaro Asakawa, Naoto Kanzaki, Song-Yun Kan, Akihiko Hiroe, Rie Togashi, Hisashi Murakami, Yusaku Kashiwagi, Yoshinao Kumagai, and Akinori Koukitu
Presentation: Dec. 15, Mo-O22, Oral.
46)
Thermal Stability of Ga2O3 in Mixed Gases of H2 and N2
R. Togashi, K. Nomura, C. Eguchi, T. Fukizawa, K. Goto, H. Murakami, Y. Kumagai, A. Kuramata, S. Yamakoshi, A. Koukitu
Presentation: Dec. 15, Mo-O24, Oral.
47)
Temperature Dependence of InGaN Growth by Tri-Halide Vapor Phase Epitaxy
T. Hirasaki, Y. Watanabe, T. Hasegawa, H. Murakami, Y. Kumagai, and A. Koukitu
Presentation: Dec. 16, Tu-P28, Poster.
48)
Theoretical Calculation of Thermochemical Data for the Growth of Group-III Nitrides
N. Takekawa, H. Murakami, Y. Kumagai, and A. Koukitu
Presentation: Dec. 16, Tu-P31, Poster.
2015 Photonics West, Feb. 7-12, 2015, The Moscone Center, San Francisco, CA, U.S.A.
49)
(Invited) High-purity and highly-transparent AlN bulk crystal growth for UVC LED application by HVPE
Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Rie Togashi, Reo Yamamoto, Baxter Moody, Hisashi Murakami, Ramón Collazo, Akinori Koukitu and Zlatko Sitar
Presentation: Feb. 9, 9363-2, Oral.
戞62夞墳梡暔棟妛夛弔婫妛弍島墘夛, 2015擭3寧11擔-14擔, 搶奀戝妛徝撿僉儍儞僷僗
50)
悈慺丒拏慺婥棳拞偵偍偗傞兝-Ga2O3偺擬揑埨掕惈偺擬椡妛揑専摙
晉妦 棟宐, 栰懞 堦忛, 峕岥 愮恞, 暀郪 岶峢, 屻摗 寬, 懞忋 彯, 孎扟 媊捈, 憅枖 楴恖, 嶳崢 栁怢, 銝銙 柧攲
3寧13擔敪昞, 13p-D1-2, 岥摢.
51)
僴儔僀僪婥憡惉挿朄偵傛傞兝-Ga2O3婎斅忋儂儌僄僺僞僉僔儍儖惉挿
栰懞 堦忛, 屻摗 寬, 嵅乆栘 岞暯, 壨尨 崕柧, 僥傿儐 僋傽儞 僩僁, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 搶榚 惓崅, 憅枖 楴恖, 嶳崢 栁怢, Bo Monemar, 銝銙 柧攲
3寧13擔敪昞, 13p-D1-6, 岥摢.
52)
(Invited) III-Cl丒III-Cl3崿嵼僴儔僀僪婥憡惉挿偵傛傞III懓拏壔暔摿堎峔憿偺宍惉
孎扟 媊捈, 晉妦 棟宐, 僥傿儐 僋傽儞 僩僁, 懞忋 彯, Bo Monemar, 銝銙 柧攲
3寧14擔敪昞, 14p-B1-1, 岥摢.
徿忬