暯惉25擭搙
International Conference on LED and Its Industrial Application '13 (LEDIA '13), Apr. 23-25, 2013, Pacifico Yokohama, Japan
1)
Growth of Semi-polar InN Layers on GaAs(311)A and (311)B by MOVPE
Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
Presentation: Apr. 23, 23p-LED1-4, Oral.
2)
High-Speed Growth of In- and N-polarity InN Using a Two-Stage Source Generation Hydride Vapor Phase Epitaxy System
R. Togashi, N. Fujita, R. Imai, H. Murakami, Y. Kumagai, and A. Koukitu
Presentation: Apr. 24, 24p-LEDp3-15, Poster.
3)
High-Speed Growth of InN over 10 兪m/h by a Novel HVPE System
N. Fujita, R. Imai, H. Saito, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
Presentation: Apr. 24, 24p-LEDp3-16, Poster.
4)
Deep-UV Transparent AlN Substrates Prepared by HVPE for UV-C LED Applications
T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami,Y. Kumagai, A. Koukitu, and Z. Sitar
Presentation: Apr. 25, 25a-LED4-4, Oral.
5)
(Invited) Fabrication of DUV-LEDs on AlN Substrates
T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, J. Xie, R. Collazo, S. Inoue, Y. Kumagai, A. Koukitu, and Z. Sitar
Presentation: Apr. 25, 25a-LED4-7, Oral.
墳梡暔棟妛夛墳梡揹巕暔惈暘壢夛 尋媶椺夛乽儚僀僪僊儍僢僾敿摫懱偺婎斅偐傜揥奐偡傞僨僶僀僗丂乣幚梡僨僶僀僗傊偺揥奐乣乿, 2013擭6寧7擔, 嫗搒僥儖僒
6)
(Invited) HVPE朄偵傛傞AlN婎斅嶌惢偲260 nm懷怺巼奜LED傊偺墳梡
孎扟媊捈, 銝銙柧攲
6寧7擔敪昞, 岥摢.
2013 Collaborative Conference on Crystal Growth (3CG 2013), Jun. 10-13, 2013, WESTIN Resort & SPA CANCUN, Cancun, Mexico
7)
(Invited) Semi-polar growth of InN on GaAs(11n) substrate by MOVPE
Hisashi Murakami, Rie Togashi, Yoshinao Kumagai, Akinori Koukitu
Presentation: Jun. 10, C1, Oral.
擔杮寢徎惉挿妛夛僫僲峔憿丒僄僺僞僉僔儍儖惉挿暘壢夛 戞5夞拏壔暔敿摫懱寢徎惉挿島墘夛, 2013擭6寧21擔-22擔, 戝嶃戝妛嬧埱夛娰
8)
嶰墫壔僈儕僂儉傪梡偄偨GaN崅壏岤枌惉挿
懞忋 彯, 媨嶈 抭惉, 晉妦 棟宐, 孎扟 媊捈, 銝銙 柧攲
6寧21擔敪昞, FR09, 億僗僞乕.
9)
HVPE朄偵傛傞怺巼奜岝摟夁惈傪桳偡傞崅昳幙AlN偺惉挿
妟夑 弐惉, 嶁姫 棿擵夘, 媣曐揷 桳婭, 塱搰 揙, 栘壓 嫓, B. Moody, J. Xie, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲, Z. Sitar
6寧21擔敪昞, FR15, 億僗僞乕. 亙敪昞彠椼徿庴徿亜徿忬
10)
慜嬱懱擇抜奒惗惉HVPE朄偵傛傞InN偺崅懍惉挿偺幚尰
摗揷 捈恖, 惸摗 峀怢, 崱堜 椇懢, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
6寧21擔敪昞, FR19, 億僗僞乕. 亙敪昞彠椼徿庴徿亜徿忬
11)
慜嬱懱擇抜奒惗惉HVPE憰抲傪梡偄偨In嬌惈偍傛傃N嬌惈InN惉挿偺斾妑専摙
惸摗 峀怢, 摗揷 捈恖, 崱堜 椇懢, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
6寧21擔敪昞, FR20, 億僗僞乕.
12)
GaAs(11n)婎斅忋敿嬌惈InN惉挿偺壏搙埶懚惈
杒堜 桟揟, 嵅媣娫 暥徍, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
6寧21擔敪昞, FR21, 億僗僞乕.
The 10th International Conference on Nitride Semiconductors (ICNS-10), Aug. 25-30, 2013, Gaylord National Resort & Convention Center, Washington, D.C., U.S.A.
13)
Comparative Study on High-Speed InN Growth in Both In- and N-Polarities Using a Two-Stage Source Generation Hydride Vapor Phase Epitaxy System
Rie Togashi, Naoto Fujita, Ryota Imai, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
Presentation: Aug. 26, A1.04, Oral.
14)
Temperature Dependence of InN Growth by a Novel HVPE System with Two-Step Generation of InCl3
Naoto Fujita, Ryota Imai, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
Presentation: Aug. 26, A1.05, Oral.
15)
(Invited) DUV-LEDs Fabricated on HVPE-AlN Substrates
T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, J. Xie, R. Collazo, S. Inoue, Y. Kumagai, A. Koukitu and Z. Sitar
Presentation: Aug. 26, C3.02, Oral.
16)
Donor-Acceptor Pair Compensation and the Broad 2.8 eV Luminescence in Bulk AlN
Benjamin E. Gaddy, Zachary A. Bryan, Isaac S. Bryan, Ronny Kirste, Jinqiao Xie, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, Zlatko Sitar, Ramon Collazo and Douglas L. Irving
Presentation: Aug. 26, A3.11, Oral.
17)
Influence of Growth Temperature on Homo-Epitaxial Growth of AlN by HVPE on PVT-AlN Substrates
Toshinari Nukaga, Ryunosuke Sakamaki, Yuki Kubota, Toru Nagashima, Toru Kinoshita, Baxter Moody, Jinqiao Xie, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu and Zlatko Sitar
Presentation: Aug. 26, AP1.68, Poster.
18)
Vacancy Defects in UV-Transparent HVPE-AlN
Tanja Kuittinen, Filip Tuomisto, Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Akinori Koukitu, Ramon Collazo and Zlatko Sitar
Presentation: Aug. 28, A6.10, Oral.
戞74夞墳梡暔棟妛夛廐婫妛弍島墘夛, 2013擭9寧16擔-20擔, 摨巙幮戝妛嫗揷曈僉儍儞僷僗
19)
崅壏壓偵偍偗傞兝-Ga2O3 (010)婎斅昞柺埨掕惈偺専摙
暀郪 岶峢, 峕岥 愮恞, 壴宍 徦巕, 栰懞 堦忛, 屻摗 寬, 晉妦 棟宐, 懞忋 彯, 憅枖 楴恖, 孎扟 媊捈, 銝銙 柧攲
9寧16擔敪昞, 16p-B4-2, 岥摢.
20)
僴儔僀僪婥憡惉挿朄偵傛傞ZnO敄枌惉挿偺巁慺尮偺専摙
恄嶈 捈恖, 埳嵅 梇懢, 峃徏 弫, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 攼栘 桬嶌, 銝銙 柧攲
9寧17擔敪昞, 17a-B4-6, 岥摢.
21)
乮墳梡暔棟妛夛桪廏榑暥徿庴徿婰擮島墘乯 Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport
孎扟 媊捈, 媣曐揷 桳婭, 塱搰 揙, 栘壓 嫓, Rafael Dalmau, Raoul Schlesser, Baxter Moody, Jinqiao Xie, 懞忋 彯, 銝銙 柧攲, Zlatko Sitar
9寧19擔敪昞, 19p-B5-1, 岥摢. 徿忬
22)
慜嬱懱擇抜奒惗惉HVPE朄偵傛傞In嬌惈偍傛傃N嬌惈InN偺崅懍惉挿
惸摗 峀怢, 摗揷 捈恖, 崱堜 椇懢, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
9寧19擔敪昞, 19p-B5-6, 岥摢.
2013 JSAP-MRS Joint Symposia, Sep. 16-20, 2013, Doshisha University, Kyoto, Japan
23)
(Invited) High temperature growth of thick GaN using GaCl3-NH3 system
Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
Presentation: Sep. 17, 17p-M6-1, Oral.
24)
Demonstration of high-speed growth of InN by HVPE with a two-step precursor generation scheme
Naoto Fujita, Ryota Imai, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
Presentation: Sep. 17, 17p-M6-3, Oral.
25)
Dependence of InGaN-HVPE growth on group-III input partial pressure
Takahide Hirasaki, Masato Ishikawa, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
Presentation: Sep. 17, 17p-M6-4, Oral.
26)
Growth of high quality AlN with deep-UV transparency by HVPE
Toshinari Nukaga, Ryunosuke Sakamaki, Yuki Kubota, Toru Nagashima, Toru Kinoshita, Baxter Moody, Jinqiao Xie, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu and Zlatko Sitar
Presentation: Sep. 18, 18a-M6-8, Oral.
8th International Workshop on Bulk Nitride Semiconductors (IWBNS-VIII), Sep. 30 - Oct. 5, 2013, Kloster Seeon, Seeon, Germany
27)
(Invited, Keynote) Influence of growth parameters on homo-epitaxial growth of thick AlN layers by HVPE on PVT-AlN substrates,
Y. Kumagai, T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, A. Koukitu, and Z. Sitar
Presentation: Oct. 2, Oral.
28)
(Invited) Properties of homoepitaxial AlN layers grown by HVPE on PVT-AlN substrates,
T. Nagashima, Y. Kubota, R. Okayama, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, R. Collazo, and Z. Sitar
Presentation: Oct. 2, Oral.
29)
(Invited) High speed and high temperature growth of GaN by HVPE using GaCl3 as group III-precursor
Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
Presentation: Oct. 2, Oral.
30)
(Invited) High-Speed InN Growth Using a Novel Two-Stage Source Generation Hydride Vapor Phase Epitaxy System
R. Togashi, N. Fujita, R. Imai, H. Murakami, Y. Kumagai,and A. Koukitu
Presentation: Oct. 3, Oral.
31)
(Invited, Keynote) Hydride Vapor Phase Epitaxy of InGaN
A. Koukitu,T. Hirasaki, H. Murakami and Y. Kumagai
Presentation: Oct. 4, Oral.
戞43夞寢徎惉挿崙撪夛媍乮NCCG-43乯, 2013擭11寧6擔-8擔, 挿栰巗惗奤妛廗僙儞僞乕
32)
慜嬱懱擇抜奒惗惉HVPE朄偵傛傞InN惉挿偺壏搙埶懚惈
摗揷 捈恖, 惸摗 峀怢, 崱堜 椇懢, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
11寧7擔敪昞, 07aB11, 岥摢.
33)
慜嬱懱擇抜奒惗惉HVPE朄偵傛傞In, N奺嬌惈InN崅懍惉挿偺斾妑専摙
惸摗 峀怢, 摗揷 捈恖, 崱堜 椇懢, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
11寧7擔敪昞, 07aB12, 岥摢.
34)
HVPE楩撪崅壏暤埻婥壓偵偍偗傞AlN扨寢徎昞柺偺楎壔
嶁姫 棿擵夘, 妟夑 弐惉, 暯楢 桳婭, 塱搰 揙, 栘壓 嫓, Baxter Moody, 懞忋 彯, R. Collazo, 孎扟 媊捈, 銝銙 柧攲, Zlatko Sitar
11寧7擔敪昞, 07PS14, 億僗僞乕.
35)
悈慺丒拏慺暤埻婥壓偵偍偗傞兝-Ga2O3 (010)婎斅昞柺埨掕惈偺専摙
暀郪 岶峢, 峕岥 愮恞, 壴宍 徦巕, 栰懞 堦忛, 屻摗 寬, 晉妦 棟宐, 懞忋 彯, 憅枖 楴恖, 孎扟 媊捈, 銝銙 柧攲
11寧7擔敪昞, 07PS18, 億僗僞乕.
36)
巁壔垷墧HVPE儂儌僄僺僞僉僔儍儖惉挿偺VI懓尮偺斾妑専摙
恄嶈 捈恖, 埳嵅 梇懢, 峃徏 弫, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 攼栘 桬嶌, 銝銙 柧攲
11寧7擔敪昞, 07PS20, 億僗僞乕.
37)
HVPE朄偵傛傞PVT-AlN婎斅忋儂儌僄僺僞僉僔儍儖惉挿偵偍偗傞惉挿懍搙憹壛偺専摙
妟夑 弐惉, 嶁姫 棿擵夘, 暯楢 桳婭, 塱搰 揙, 栘壓 嫓, B. Moody, 懞忋 彯, R. Collazo, 孎扟 媊捈, 銝銙 柧攲, Z. Sitar
11寧8擔敪昞, 08aB06, 岥摢.
2014 Photonics West, Feb. 1-6, 2014, The Moscone Center, San Francisco, CA, U.S.A.
38)
(Invited) Performance of DUV-LEDs fabricated on HVPE-AlN substrates
Toru Kinoshita, Toshiyuki Obata, Toru Nagashima, Hiroyuki Yanagi, Baxter Moody, Ramon Collazo, Shin-ichiro Inoue, Yoshinao Kumagai, Akinori Koukitu, Zlatko Sitar
Presentation: Feb. 6, 8986-64, Oral.
戞61夞墳梡暔棟妛夛弔婫妛弍島墘夛, 2014擭3寧17擔-20擔, 惵嶳妛堾戝妛憡柾尨僉儍儞僷僗
39)
慜嬱懱擇抜奒惗惉HVPE朄偵傛傝嶌惢偟偨InN惉挿憌偺摿惈昡壙
晉妦 棟宐, 惸摗 峀怢, 摗揷 捈恖, 崱堜 椇懢, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
3寧19擔敪昞, 19p-E13-4, 岥摢.
40)
InGaN惉挿偵偍偗傞In庢傝崬傒偺柺曽埵埶懚惈偺棟榑専摙
摗懞 樞, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
3寧19擔敪昞, 19p-E13-13, 岥摢.