暯惉24擭搙
擔杮寢徎惉挿妛夛僫僲峔憿丒僄僺僞僉僔儍儖惉挿暘壢夛 戞4夞拏壔暔敿摫懱寢徎惉挿島墘夛, 2012擭4寧27擔-28擔, 搶嫗戝妛惗嶻媄弍尋媶強
1)
GaAs(311)A媦傃(311)B忋敿嬌惈InN偺MOVPE惉挿
杧揷 揘榊, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
4寧28擔敪昞, SA-20, 億僗僞乕.
2)
條乆側僴儘僎儞壔暔傪尨椏偵梡偄偨InGaN-HVPE惉挿偺擬椡妛夝愅
暯嶈 婱塸, 壴壀 岾巎, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
4寧28擔敪昞, SA-21, 億僗僞乕.
3)
GaAs(110)婎斅忋敿嬌惈InN惉挿偵偍偗傞悈慺揧壛岠壥
懞忋 彯, 杧揷 揘榊, 晉妦 棟宐, 孎扟 媊捈, 銝銙 柧攲
4寧28擔敪昞, SA-22, 億僗僞乕.
4)
(Invited) GaN帺棫婎斅忋InN僴僀僪儔僀僪婥憡惉挿偵偍偗傞婎斅嬌惈偺塭嬁
晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
4寧28擔敪昞, IN-3, 岥摢.
The 4th International Symposium on Growth of III-Nitrides (ISGN-4), Jul. 16-19, 2012, St. Petersburg, Russia
5)
Thermodynamic analysis of InGaN-HVPE growth using III-bromides and III-iodides
T. Hirasaki, K. Hanaoka, H. Murakami, Y. Kumagai and A. Koukitu
Presentation: Jul. 17, Tu-32p, Poster.
6)
Suppression of twin formation for the growth of InN(10-1-3) on GaAs(110) by metalorganic vapor phase epitaxy
H. Murakami, S. Takenaka, T. Hotta, Y. Kumagai and A. Koukitu
Presentation: Jul. 19, Th-12o, Oral.
戞73夞墳梡暔棟妛夛妛弍島墘夛, 2012擭9寧11擔-14擔, 徏嶳戝妛暥嫗僉儍儞僷僗
7)
Improvement of crystalline and optical properties of InN grown on nitrided (0001) sapphire with high NH3 input partial pressures by HVPE
R. Togashi, S. Yamamoto, K. F. Karlsson, H. Murakami, Y. Kumagai, P. O. Holtz, A. Koukitu
9寧11擔敪昞, 11p-H10-3, 岥摢.
8)
俀抜奒尨椏惗惉婡峔傪桳偡傞怴婯HVPE朄偵傛傞InN偺崅懍惉挿偺専摙
崱堜 椇懢, 嶳杮 隳, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
9寧13擔敪昞, 13a-H9-7, 岥摢.
9)
悈慺丒拏慺崿崌暤埻婥壓偺崅壏擬張棟偵傛傞僒僼傽僀傾昞柺忋AlN僂傿僗僇乕偺宍惉儊僇僯僘儉
壴宍 徦巕, 崙嶈 撝, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
9寧13擔敪昞, 13a-H10-8, 岥摢.
10)
僶儖僋PVT婎斅忋HVPE惉挿偵傛傞AlN帺棫婎斅偺嶌惢
嶁姫 棿擵夘, 媣曐揷 桳婭, 塱搰 揙, 栘壓 嫓, R. Dalmau, R. Schlesser, B. Moody, J. Xie, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲, Z. Sitar
9寧13擔敪昞, 13a-H10-9, 岥摢.
11)
HVPE惉挿僼儕乕僗僞儞僨傿儞僌AlN婎斅偺堎曽惈傪峫椂偟偨暘岝僄儕僾僜儊僩儕乕昡壙
壀杮 峗, 嵅摗 悞怣, 掔 峗堦, 楅栘 摴晇, 孎扟 媊捈, 媣曐揷 桳婭, 塱搰 揙, 栘壓 嫓, R. Dalmau, R. Schlesser, B. Moody, J. Xie, 懞忋 彯, 銝銙 柧攲, Z. Sitar
9寧13擔敪昞, 13a-H10-10, 岥摢.
12)
PVT婎斅忋偵惉挿偟偨C僪乕僾HVPE朄AlN岤枌偺岝妛摿惈偲峔憿摿惈
塱搰 揙, 媣曐揷 桳婭, 栘壓 嫓, R. Schlesser, B. Moody, J. Xie, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲, Z. Sitar
9寧13擔敪昞, 13a-H10-11, 岥摢.
13)
僴儔僀僪婥憡惉挿朄偵傛傞m柺ZnO僶儖僋婎斅忋傊偺儂儌僄僺僞僉僔儍儖ZnO偺惉挿
埳嵅 梇懢, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
9寧13擔敪昞, 13p-H7-10, 岥摢.
International Workshop on Nitride Semiconductors 2012 (IWN2012), Oct. 14-19, 2012, Sapporo Convention Center, Sapporo, Japan
14)
Homoepitaxial growth of thick AlN layers by HVPE on bulk AlN substrates prepared by PVT
R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, R. Dalmau, R. Schlesser, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
Presentation: Oct. 15, MoP-GR-48, Poster.
15)
High-temperature heat-treatment of c-, a-, r- and m-plane sapphire substrates in mixed gases of H2 and N2
K. Nomura, S. Hanagata, A. Kunisaki, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
Presentation: Oct. 15, MoP-GR-72, Poster.
16)
Predictive Calculations of Defect Properties using Hybrid Exchange DFT: Applications to Optically Active Impurities in AlN
Benjamin E. Gaddy, Ramón Collazo, Jinqiao Xie, Zachary Bryan, Ronny Kirste, Marc Hoffmann, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, Zlatko Sitar, and Douglas L. Irving
Presentation: Oct. 15, MoP-PR-44, Poster.
17)
Effect of high NH3 input partial pressure on hydride vapor phase epitaxy of InN using nitrided (0001) sapphire substrates
R. Togashi, S. Yamamoto, K. F. Karlsson, H. Murakami, Y. Kumagai, P. O. Holtz, and A. Koukitu
Presentation: Oct. 16, TuP-GR-55, Poster.
18)
HVPE growth of InN on InN/sapphire (0001) templates prepared by MBE
R. Imai, S. Yamamoto, R. Togashi, H. Murakami, Y. Kumagai, T. Yamaguchi, T. Araki, Y. Nanishi, and A. Koukitu
Presentation: Oct. 16, TuP-GR-60, Poster.
19)
MOVPE growth of semi-polar InN layers on GaAs(311)A and (311)B substrates
Hisashi Murakami, Tetsuro Hotta, Mayu Suematsu, Tadashi Ohachi, Yoshinao Kumagai, and Akinori Koukitu
Presentation: Oct. 16, TuP-GR-66, Poster.
20)
Prediction of point defect behavior in nitrides using hybrid exchange DFT: Applications to the deep-UV absorption band in AlN
Zlatko Sitar, Benjamin E. Gaddy, Ramon Collazo, Jinquiao Xie, Zachary Bryan, Ronny Kirste, Marc Hoffmann, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, and Douglas L. Irving
Presentation: Oct. 16, TuP-LN-7, Poster.
21)
On the origin of the 265 nm absorption band in AlN bulk crystals
Ramón Collazo, Jinqiao Xie, Benjamin E. Gaddy, Zachary Bryan, Ronny Kirste, Marc Hoffmann, Rafael Dalmau, Baxter Moody, Yoshinao Kumagai, Toru Nagashima, Yuki Kubota, Toru Kinoshita, Akinori Koukitu, Douglas L. Irving, and Zlatko Sitar
Presentation: Oct. 18, ThP-PR-32, Poster.
22)
Optical and structural properties of intentionally C-doped thick HVPE AlN layers grown on PVT AlN substrates
T. Nagashima, Y. Kubota, T. Kinoshita, R. Schlesser, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
Presentation: Oct. 18, ThP-PR-41, Poster.
Intensive Discussion on Growth of Nitride Semiconductors, Oct. 22-23, 2012, Tohoku University, Sendai, Japan
23)
(Invited) High-Speed Growth of InN Using a Two-Stage Source Generation HVPE System
R. Togashi, R. Imai, S. Yamamoto, H. Murakami, Y. Kumagai, A. Koukitu
Presentation: Oct. 22, Oral.
24)
(Invited) Preparation of low dislocation density and deep-UV transparent AlN substrates by hydride vapor phase epitaxy
Y. Kumagai, Y. Kubota, T. Nagashima, T. Kinoshita, R. Collazo, R. Dalmau, R. Schlesser, B. Moody, J. Xie, H. Murakami, A. Koukitu, Z. Sitar
Presentation: Oct. 23, Oral.
戞42夞寢徎惉挿崙撪夛媍乮NCCG-42乯, 2012擭11寧9擔-11擔, 嬨廈戝妛拀巼僉儍儞僷僗
25)
HVPE朄傪梡偄偨sapphire(0001)婎斅忋InN惉挿偵偍偗傞NH3嫙媼暘埑埶懚惈
晉妦 棟宐, 嶳杮 隳, K. F. Karlsson, 懞忋 彯, 孎扟 媊捈, P. O. Holtz, 銝銙 柧攲
11寧9擔敪昞, 09aC08, 岥摢.
26)
俀抜奒尨椏惗惉HVPE朄偵傛傞GaN/sapphire(0001)僥儞僾儗乕僩忋InN惉挿
崱堜 椇懢, 嶳杮 隳, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
11寧9擔敪昞, 09aC09, 岥摢.
27)
HVPE朄偵傛傞怺巼奜岝摟夁惈傪桳偡傞崅昳幙AlN僂僃乕僴乕偺嶌惢
嶁姫 棿擵夘, 媣曐揷 桳婭, 塱搰 揙, 栘壓 嫓, Rafael Dalmau, Raoul Schlesser, Baxter Moody, Jinqiao Xie, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲, Zlatko Sitar
11寧9擔敪昞, 09aC10, 岥摢.
28)
挻崅壏擬張棟僒僼傽僀傾昞柺偺悈慺丒拏慺崿崌僈僗偲偺斀墳偵傛傞AlN僂傿僗僇乕宍惉儊僇僯僘儉
壴宍 徦巕, 崙嶈 撝, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
11寧9擔敪昞, 09pC01, 岥摢.
29)
InGaN惉挿慻惉偺柺曽埵埶懚惈偵娭偡傞棟榑揑峫嶡
摗懞 樞, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
11寧10擔敪昞, 10PS03, 億僗僞乕.
30)
HVPE朄偵傛傞m柺ZnO婎斅忋傊偺ZnO惉挿偵偍偗傞昞柺僆僼曽岦偺塭嬁
埳嵅 梇懢, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
11寧10擔敪昞, 10PS06, 億僗僞乕.
2012 Collaborative Conference on Crystal Growth (3CG 2012), Dec. 11-14, 2012, Doubletree by Hilton Orlando at SeaWorld, Orlando, FL, U.S.A.
31)
(Invited) Hetero- and Homo-Epitaxy of Thick AlN Layers by Hydride Vapor Phase Epitaxy
Y. Kumagai, Y. Kubota, T. Nagashima, T. Kinoshita, R. Dalmau, R. Schlesser, B. Moody, J. Xie, H. Murakami, A. Koukitu, Z. Sitar
Presentation: Dec. 12, A26, Oral.
搶嫗擾岺戝妛丒揹婥捠怣戝妛 戞9夞崌摨僔儞億僕僂儉乽僫僲枹棃嵽椏偲僐僸乕儗儞僩岝壢妛乿, 2012擭12寧15擔, 揹婥捠怣戝妛
32)
Substrate Orientation Dependence of Sapphire Decomposition and Resultant AlN Formation during High-Temperature Heat-Treatment in a Mixed Gas of H2 and N2
Kazushiro Nomura, Shoko Hanagata, Atsushi Kunisaki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
12寧15擔敪昞, T1, 億僗僞乕.
33)
Investigation of InN growth on InN/sapphire (0001) MBE-grown templates by HVPE
R. Imai, S. Yamamoto, R. Togashi, H. Murakami, Y. Kumagai, T. Yamaguchi, T. Araki, Y. Nanishi, and A. Koukitu
12寧15擔敪昞, T6, 億僗僞乕.
34)
怴婯HVPE朄傪梡偄偨InGaN嶰尦崿徎偺崅懍惉挿
挬栰 悢攏, 暯嶈 婱塸, 敽栰 悙婭, 愇愳 恀恖, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
12寧15擔敪昞, T8, 億僗僞乕.
35)
擬椡妛夝愅偵傛傞InGaN-HVPE惉挿偺偨傔偺嵟揔側尨椏宯偺扵嶕
暯 婱塸, 壴壀 岾巎, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
12寧15擔敪昞, T18, 億僗僞乕.
36)
僴儔僀僪婥憡惉挿朄偵傛傞m柺ZnO婎斅忋傊偺儂儌僄僺僞僉僔儍儖惉挿偵偍偗傞婎斅僆僼妏偺岠壥
埳嵅 梇懢, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
12寧15擔敪昞, T24, 億僗僞乕.
37)
僒僼傽僀傾婎斅偺悈慺丒拏慺崿崌僈僗拞崅壏擬張棟偵傛傞AlN僂傿僗僇乕宍惉儊僇僯僘儉偺専摙
壴宍 徦巕, 崙嶈 撝, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
12寧15擔敪昞, T29, 億僗僞乕.
亙桪廏億僗僞乕敪昞乽恑曕徿乿庴徿亜
徿忬2013 Photonics West, Feb. 2-7, 2013, The Moscone Center, San Francisco, CA, U.S.A.
38)
Deep ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy
Toru Kinoshita, Keiichiro Hironaka, Toshiyuki Obata, Toru Nagashima, Rafael F. Dalmau, Raoul Schlesser, Baxter Moody, Jinqiao Xie, Shin-ichiro Inoue, Yoshinao Kumagai, Akinori Koukitu, Zlatko Sitar
Presentation: Feb. 6, 8641-36, Oral.
