暯惉20擭搙
2008擭擔杮寢徎惉挿妛夛摿暿島墘夛, 2008擭4寧18擔, 僉儍儞僷僗僀僲儀乕僔儑儞僙儞僞乕搶嫗
1)
(Invited) 拏壔暔婥憡惉挿偺擬椡妛夝愅
銝銙 柧攲, 懞忋 彯, 孎扟 媊捈
4寧18擔敪昞, 岥摢.
14th International Conference of Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV), Jun. 1-6, 2008, Metz, France
2)
Improvements in crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressure
Hisashi Murakami, Hyun-Chol Cho, Yoshinao Kumagai and Akinori koukitu
Presentation: Jun. 4, We-P.18, Poster.
揹巕忣曬捠怣妛夛尋媶夛乽嵽椏僨僶僀僗僒儅乕儈乕僥傿儞僌丗僀儞僕僂儉僫僀僩儔僀僪偺尰忬偲彨棃乿, 2008擭6寧27擔, 婡夿怳嫽夛娰, 搶嫗
3)
(Invited) HVPE朄偵傛傞InN岤枌惉挿偺尰忬偲壽戣
孎扟 媊捈, 銝銙 柧攲
6寧27擔敪昞, 岥摢.
The 2nd International Symposium on Growth of III-Nitrides (ISGN-2), Jul. 6-9, 2008, Laforet Shuzenji, Izu, Japan
4)
Theoretical Investigation on the Decomposition Process of GaN(0001) Surface under a Hydrogen Atmosphere
Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
Presentation: Jul. 7, Mo-31, Poster.
5)
Preparation of a crack-free AlN template layer on sapphire substrate by hydride vapor phase epitaxy at 1450°C
Jumpei Tajima, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada, and Akinori Koukitu
Presentation: Jul. 7, Mo-40, Poster.
6)
In situ Gravimetric Monitoring of Surface Reactions between Sapphire and NH3
Kazuhiro Akiyama, Yasuhiro Ishii, Hisashi Murakami, Yoshinao Kumagai, and Akinori Koukitu
Presentation: Jul. 8, Tu-61, Poster.
27th Electronic Materials Symposium (EMS-27), Jul. 9-11, 2008, Laforet Shuzenji, Izu, Japan
7)
Investigation of surface reactions between (0001) C-plane sapphire and NH3 by in situ gravimetric monitoring method
Kazuhiro Akiyama, Yasuhiro Ishii, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
Presentation: Jul. 9, A-2, Poster.
8)
First-principle calculation for the decomposition process of the reconstructed GaN(0001) surface under a hydrogen atmosphere
Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
Presentation: Jul. 9, A-3, Poster.
9)
Study of the decomposition of R-plane sapphire by the first principles calculation
Uliana Panyukova, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
Presentation: Jul. 9, A-4, Poster.
10)
High temperature growth of a crack-free AlN layer on sapphire substrate by hydride vapor phase epitaxy
Jumpei Tajima, Hisashi Murakami, Yoshinao Kumagai, Kazuya Takada and Akinori Koukitu
Presentation: Jul. 10, E-9, Poster.
11)
Facet formation of InN for the growth of high quality InN layers on GaAs (111)B surfaces by MOVPE
Hisashi Murakami, Hyun-Chol Cho, Yoshinao Kumagai and Akinori Koukitu
Presentation: Jul. 10, I-9, Poster.
XXI Congress of the International Union of Crystallography (IUCr 2008), Aug. 23-31, 2008, Osaka, Japan
12)
(Invited) Hydride vapor phase epitaxy of AlN and AlGaN
Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
Presentation: Aug. 27, MS.49.2, Oral.
戞69夞墳梡暔棟妛夛妛弍島墘夛, 2008擭9寧2擔-5擔, 拞晹戝妛
13)
In situ 僌儔償傿儊僩儕僢僋朄偵傛傞6H-SiC(0001)Si柺偺昞柺暘夝懍搙偺應掕
廐嶳 榓攷, 愇堜 懽姲, 懞忋 彯, 孎扟 媊捈, 墱懞 岹揟, 恵揷 弤, 栘杮 峆挩, 銝銙 柧攲
9寧2擔敪昞, 2p-CE-8, 岥摢.
14)
拏慺媦傃悈慺暤埻婥壓偵偍偗傞InN{0001}暘夝偺嬌惈埶懚惈
晉妦 棟宐, 姏壓 朁庽, 懌棫 桾榓, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
9寧4擔敪昞, 4a-CG-6, 岥摢.
15)
僒僼傽僀傾(0001)弶婜婎斅傪梡偄偨AlN帺棫婎斅偺嶌惢
媣曐揷 桳婭, 揷搰 弮暯, 愇晬 惓惉, 塱搰 揙, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 崅揷 榓嵠, 銝銙 柧攲
9寧4擔敪昞, 4p-CG-11, 岥摢.
16)
HVPE朄偵傛傞僒僼傽僀傾婎斅忋僋儔僢僋僼儕乕AlN僥儞僾儗乕僩偺嶌惢
揷搰 弮暯, 媣曐揷 桳婭, 懞忋 彯, 孎扟 媊捈, 崅揷 榓嵠, 銝銙 柧攲
9寧4擔敪昞, 4p-CG-12, 岥摢.
17)
悈慺暤埻婥壓偵偍偗傞GaN(0001)昞柺偺暘夝夁掱偺棟榑夝愅
楅栘 傂偐傝, 晉妦 棟宐, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
9寧4擔敪昞, 4p-CG-13, 岥摢.
18)
SiC (0001) Si柺 - H2宯偵偍偗傞昞柺斀墳懍搙偺偦偺応應掕
愇堜 懽姲, 廐嶳 榓攷, 懞忋 彯, 孎扟 媊捈, 墱懞 岹揟, 恵揷 弤, 栘杮 峆挩, 銝銙 柧攲
9寧4擔敪昞, 4p-CG-14, 岥摢.
5th International Workshop on Zinc Oxide and Related Materials, Sep. 21-24, 2008, Eagle Crest Resort, Ypsilanti, MI, U.S.A.
19)
Influence of growth condition on homoepitaxy of ZnO by halide vapor phase epitaxy
Rui Masuda, Tetsuo Fujii, Naoki Yoshii, Yoshinao Kumagai, Akinori Koukitu
Presentation: Sep. 22, AP2, Poster.
20)
Homoepitaxial growth of high-quality ZnO layers at 1000°C by halide vapor phase epitaxy
Yoshinao Kumagai, Tetsuo Fujii, Rui Masuda, Naoki Yoshii, Akinori Koukitu
Presentation: Sep. 22, AP18, Poster.
21)
Nucleation and coalescence behavior for halide vapor phase epitaxy-grown ZnO on ZnO templates
Tetsuo Fujii, Naoki Yoshii, Rui Masuda, Yoshinao Kumagai, Akinori Koukitu
Presentation: Sep. 22, AP35, Poster.
International Workshop on Nitride Semiconductors 2008 (IWN2008), Oct. 6-10, 2008, Montreux Music and Convention Center, Montreux, Switzerland
22)
Ab Initio Calculation for an Initial Growth Process of GaN on (0001) and (0001) Surfaces by Vapor Phase Epitaxy
H. Suzuki, R. Togashi, H. Murakami, Y. Kumagai, and A. Koukitu
Presentation: Oct. 6, Mo1-P10, Poster.
23)
Measurement of Misorientation of AlN Layer Grown on (111)Si for Freestanding Substrate
K. Saito, J. Tajima, Y. Kumagai, M. Ishizuki, K. Takada, H. Morioka, and A. Koukitu
Presentation: Oct. 6, Mo1-P19, Poster.
24)
Controlled Formation of Voids at the AlN and Sapphire Interface by the Sapphire Decomposition for Self-Separation of AlN Layers
J. Tajima, Y. Kubota, M. Ishizuki, T. Nagashima, R. Togashi, H. Murakami, Y. Kumagai, K. Takada, and A. Koukitu
Presentation: Oct. 7, Tu2b-P11, Poster.
25)
(Invited) Progress in Preparation of Freestanding AlN Substrates by Hydride Vapor Phase Epitaxy
Y. Kumagai, J. Tajima, Y. Kubota, M. Ishizuki, R. Togashi, H. Murakami, T. Nagashima, K. Takada, and A. Koukitu
Presentation: Oct. 8, We2b-C1, Oral.
26)
AlN Nano-islands Prepared from Polarity-Controlled Buffer Layer by Hydride Vapor Phase Epitaxy
T. Nagashima, K. Hironaka, M. Ishizuki, Y. Kumagai, A. Koukitu, K. Takada
Presentation: Oct. 8, We2b-C3, Oral.
27)
Investigation of Polarity Dependent InN{0001} Decomposition in N2 and H2 Ambient
R. Togashi, H. Adachi, T. Kamoshita, H. Murakami, Y. Kumagai, and A. Koukitu
Presentation: Oct. 9, Th2a-G3, Oral.
戞38夞寢徎惉挿崙撪夛媍 (NCCG-38), 2008擭11寧4擔-6擔, 愬戜巗愴嵭暅嫽婰擮娰, 愬戜
28)
僒僼傽僀傾婎斅忋AlN敄枌壓傊偺儃僀僪宍惉偵傛傞AlN岤枌偺帺敪揑儕僼僩僆僼
孎扟 媊捈, 揷搰 弮暯, 媣曐揷 桳婭, 愇晬 惓惉, 晉妦 棟宐, 懞忋 彯, 塱搰 揙, 崅揷 榓嵠, 銝銙 柧攲
11寧4擔敪昞, 04aC05, 岥摢.
29)
悈慺暤埻婥壓6H-SiC {0001}昞柺斀墳夁掱偺偦偺応應掕
廐嶳 榓攷, 愇堜 懽姲, 懞忋 彯, 孎扟 媊捈, 墱懞 岹揟, 栘杮 峆挩, 恵揷 弤, 銝銙 柧攲
11寧4擔敪昞, 04pA01, 岥摢.
30)
HVPE朄傪梡偄偨AlGaN寢徎偺惉挿偲昡壙
嵅摗 巎棽, 懞忋 彯, 孎扟 媊捈, 銝銙 柧攲
11寧5擔敪昞, 05aA07, 岥摢.
31)
HVPE 朄偵傛傞 AlN(0001)帺棫婎斅忋傊偺 AlN 崅壏惉挿
峕壞桰婱, 揷搰弮暯, 媣曐揷桳婭, 愇晬惓惉, 晉妦棟宐, 懞忋彯, 塱搰揙, 孎扟媊捈, 崅揷榓嵠,
銝銙柧攲
2008 擭 11 寧 5 擔, 05aB06.
32)
AlN/sapphire 奅柺 void 宍惉偵傛傞 AlN 岤枌偺帺屓暘棧
媣曐揷桳婭, 揷搰弮暯, 愇晬惓惉, 塱搰揙, 晉妦棟宐, 懞忋彯, 孎扟媊捈, 崅揷榓嵠, 銝銙柧攲
2008 擭 11 寧 5 擔, 05aB07.
33)
InN{0001}偺拏慺媦傃悈慺暤埻婥壓偵偍偗傞暘夝偺嬌惈埶懚惈
晉妦棟宐, 姏壓朁庽, 懌棫桾榓, 懞忋彯, 孎扟媊捈, 銝銙柧攲
2008 擭 11 寧 5 擔, 05aB09.
34)
Comparison of decomposition processes of R- and m-plane sapphire studied by ab initio calculation
Uliana Panyukova, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
2008 擭 11 寧 6 擔, 06aB01.
墳梡暔棟妛夛寢徎岺妛暘壢夛2008擭擭枛島墘夛丆妛廗堾憂棫昐廃擭婰擮夛娰
35)
AlN帺棫婎斅忋傊偺AlN崅壏HVPE惉挿
峕壞桰婱丆揷搰弮暯丆媣曐揷桳婭丆愇晬惓惉丆晉妦棟宐丆懞忋彯丆塱搰揙, 孎扟媊捈,
崅揷榓嵠, 銝銙柧攲
2008 擭 12 寧 11 擔, 17.
36)
Sapphire弶婜婎斅忋偵HVPE惉挿偟偨AlN岤枌偺帺敪暘棧僾儘僙僗偺峫埬
媣曐揷桳婭丆揷搰弮暯丆愇晬惓惉丆塱搰揙丆晉妦棟宐丆懞忋彯, 孎扟媊捈丆崅揷榓嵠,
銝銙柧攲
2008 擭 12 寧 11 擔, 18.
37)
偦偺応應掕傪梡偄偨6H-SiC{0001}柺偺崅壏壓偵偍偗傞昞柺斀墳儊僇僯僘儉柺嬌惈埶懚惈偺夝柧
廐嶳榓攷丆愇堜懽姲丆懞忋彯丆孎扟媊捈丆墱懞岹揟丆栘杮峆挩丆恵揷弤, 銝銙柧攲
2008 擭 12 寧 11 擔, 25.
戞56夞墳梡暔棟妛娭學楢崌島墘夛, 拀攇戝妛拀攇僉儍儞僷僗
38)
偦偺応應掕偵傛傞悈慺暤埻婥壓6H-SiC昞柺斀墳儊僇僯僘儉偺専摙
愇堜懽姲, 廐嶳榓攷丆垻晹憂暯丆懞忋彯丆孎扟媊捈丆墱懞岹揟丆栘杮峆挩丆恵揷弤丆銝銙柧攲
2009 擭 3 寧 31 擔, 31p-ZJ-16.
39)
sapphire (0001)婎斅忋 HVPE AlN 岤枌帺敪暘棧偺偨傔偺奅柺儃僀僪奼挘惂屼
峕壞桰婱, 媣曐揷桳婭, 愇晬惓惉, 揷搰弮暯, 晉妦棟宐, 懞忋彯, 孎扟媊捈, 崅揷榓嵠,
銝銙柧攲
2009 擭 4 寧 1 擔, 1a-ZJ-6.
40)
擬椡妛夝愅偵傛傞AlN-HVPE惉挿偺偨傔偺尨椏扵嶕丂乚Si墭愼偺掅尭傪栚巜偟偰乚
揷岥桰壝, 楅栘傂偐傝丆孎扟媊捈丆銝銙柧攲
2009 擭 4 寧 2 擔, 1a-ZJ-7.
41)
ZnO 婎斅忋 偵崅壏 HVPE 惉挿偟偨 ZnO 儂儌僄僺僞僉僔儍儖憌偺摿惈昡壙
孎扟媊捈, 憹揷椲, 摗堜揘梇, 媑堜捈庽, 銝銙柧攲
2009 擭 4 寧 2 擔, 2p-ZK-1.
42)
ZnCl2 偲 H2O傪尨椏婥懱偲偡傞 HVPE 朄偵傛傞 ZnO 敄枌偺崅壏惉挿
憹揷椲, 摗堜揘梇, 媑堜捈庽, 孎扟媊捈, 銝銙柧攲
2009 擭 4 寧 2 擔, 2p-ZK-2.
43)
HVPE 朄偵傛傞 ZnO/sapphire 僥儞僾儗乕僩忋傊偺 ZnO 惉挿
愼扟惓懢, 憹揷椲, 摗堜揘梇, 媑堜捈庽, 孎扟媊捈, 銝銙柧攲
2009 擭 4 寧 2 擔, 2p-ZK-3.
