暯惉19擭搙
26th Electronic Materials Symposium, EMS-26, Laforet Biwako, Moriyama
1)
Effect of hydrogen partial pressure on the growth of InN layers on GaAs (111)A surfaces by metalorganic vapor phase epitaxy
Hisashi Murakami, Hyun-Chol Cho, Yoshinao Kumagai and Akinori Koukitu
2007 擭 7 寧 5 擔, E5.
2)
Decomposition Rate on the Surface of (10-12) r-plane Sapphire Monitored by in situ Gravimetric Monitoring Method for the High Temperature Growth of non-polar AlN
Kazuhiro Akiyama, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
2007 擭 7 寧 5 擔, E11.
3)
High Temperature Growth of High-Quality AlN by Solid-Source HVPE
Ken-ichi Eriguchi, Hisashi Murakami, Uliana Panyukova, Yoshinao Kumagai Shigeo Ohira and Akinori Koukitu
2007 擭 7 寧 5 擔, H4.
Fifteenth International Conference on Crystal Growth, ICCG-15, Salt Lake City
4)
Ab initio calculation of decomposition GaN (0001) and (000-1) Surfaces
Hikari Suzuki, Rie Togashi, Murakami Hisashi, Kumagai Yoshinao, Koukitu Akinori
2007 擭 8 寧 14 擔, 1094 s09.
5)
In situ Gravimetric Monitoring of Decomposition Rate on the Surface of (10-12) r-plane Sapphire for the High Temperature Growth of non-polar AlN
Kazuhiro Akiyama, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
2007 擭 8 寧 16 擔, 1117.
6)
(Invited) HVPE growth of AlN and AlGaN
Akinori Koukitu, Hisashi Murakami, Yoshinao Kumagai
2007 擭 8 寧 16 擔, 122.
戞68夞墳梡暔棟妛夛妛弍島墘夛, 杒奀摴岺嬈戝妛
7)
尨椏暘巕惂屼HVPE朄偵傛傞AlN丆AlGaN偍傛傃InN惉挿
銝銙柧攲, 孎扟媊捈丆懞忋彯
2007 擭 9 寧 5 擔, 5p-ZR-3.
8)
GaN{0001}婎斅傪梡偄偨 InN HVPE 惉挿偵偍偗傞嬌惈惂屼
姏壓朁庽, 惣郪梇庽, 晉妦棟宐, 懞忋彯, 孎扟媊捈, 銝銙柧攲
2007 擭 9 寧 6 擔, 6p-ZS-2.
9)
條乆側暤埻婥壓偵偍偗傞 N 嬌惈 InN 暘夝偺壏搙埶懚惈
晉妦棟宐, 姏壓朁庽, 惣郪梇庽, 懞忋彯, 孎扟媊捈, 銝銙柧攲
2007 擭 9 寧 6 擔, 6p-ZS-3.
10)
HVPE朄偵傛傞sapphire婎斅忋AlN崅壏惉挿偵偍偗傞拞娫憌摫擖偺岠壥
揷搰弮暯, 媣曐揷桳婭, 塱搰揙, 晉妦棟宐, 懞忋彯, 孎扟媊捈, 崅揷榓嵠, 銝銙柧攲
2007 擭 9 寧 6 擔, 6p-ZS-8.
11)
HVPE朄偵傛傞Si-doped AlN惉挿偺専摙
媣曐揷桳婭, 揷搰弮暯, 塱搰揙, 晉妦棟宐, 懞忋彯, 孎扟媊捈, 桍桾擵, 銝銙柧攲
2007 擭 9 寧 6 擔, 6p-ZS-9.
12)
Si (111)婎斅傪弶婜婎斅偵梡偄偨HVPE朄偵傛傞AlN帺棫婎斅偺嶌惢
孎扟媊捈, 塱搰揙丆懞忋彯丆崅揷榓嵠丆銝銙柧攲
2007 擭 9 寧 7 擔, 7a-ZS-11.
13)
HVPE朄偵傛傞GaN婎斅忋崅昳幙AlxGa1-xN惉挿
懞忋彯, 嵅摗巎棽丆廐嶳榓攷丆晲摗峅丆幠揷崕岾丆嶳壓廆廋丆孎扟媊捈丆銝銙柧攲
2007 擭 9 寧 7 擔, 7p-ZS-2.
14)
In situ僌儔償傿儊僩儕僢僋朄偵傛傞NH3暤埻婥壓(0001)c柺僒僼傽僀傾暘夝懍搙偺應掕
廐嶳榓攷, 愇堜懽姲丆懞忋彯丆孎扟媊捈丆銝銙柧攲
2007 擭 9 寧 7 擔, 7p-ZS-12.
15)
戞堦尨棟寁嶼偵傛傞悈慺暤埻婥壓偵偍偗傞 GaN(0001)偍傛傃(0001)柺偺暘夝夁掱偺夝愅
楅栘傂偐傝, 晉妦棟宐, 懞忋彯, 孎扟媊捈, 銝銙柧攲
2007 擭 9 寧 6 擔, 8a-ZQ-1.
7th International Conference of Nitride Semiconductors, ICNS-7, MGM Grand Hotel, Las Vegas, Nevada
16)
Growth of thin protective AlN layers on sapphire substrates at 1065°C for hydride vapor phase epitaxy of AlN above 1300°C
Jumpei Tajima, Yuki Kubota, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Kokitu
2007 擭 9 寧 17 擔, C5.
17)
Characterization of a Freestanding AlN Substrate Prepared by Hydride Vapor Phase Epitaxy
Yoshinao Kumagai, Toru Nagashima, Hisashi Murakami, Kazuya Takada, Akinori Koukitu
2007 擭 9 寧 17 擔, F2.
18)
Experimental and ab-initio studies of temperature dependent InN decomposition in various ambient
Rie Togashi, Tomoki kamoshita, Yuuki Nishizawa, Hisashi Murakami, Yoshinao Kumagai,
Akinori Kokitu
2007 擭 9 寧 19 擔, WP36.
5th International Workshop on Bulk Nitride Semiconductors, IWBNS-V, Itaparica Village Hotel, Itaparica, Salvador, Bahia, Brazil
19)
(Invited) Polarity-dependent growth of InN on Ga- and N-polar GaN surfaces by hydride vapor phase epitaxy
Y. Kumagai, R. Togashi, T. Kamoshita, Y. Nishizawa, H. Murakami, A. Koukitu
2007 擭 9 寧 28 擔.
20)
(Invited) Polarity Control of 2H-AlN templates on Si(111) grown by RF-MBE using a mode change MEE for HVPE growth
T. Ohachi, H. Shimomura, N. Yamabe, K. Oride, H. Murakami, Y. Kumagai and A. Koukitu
2007 擭 9 寧 28 擔.
21)
(Invited) N-polar AlN sacrificial layers grown by MOCVD for free-standing AlN substrates
Misaichi Takeuchi, Yoshinao Kumagai, Akinori Koukitu and Yoshinobu Aoyagi
2007 擭 9 寧 28 擔.
22)
(Invited) High temperature growth of AlN by solid source HVPE with local heating system
Hisashi Murakami, Ken-ichi Eriguchi, Takako Hiratsuka, Uliana Panyukova, Yoshinao Kumagai, Akinori Koukitu
2007 擭 9 寧 28 擔.
23)
(Invited) Hydride vapor phase epitaxy of AlxGa1-xN layers on GaN substrates
Fumitaka Satoh, Hisashi Murakami, Yoshinao Kumagai and Akinori Koukitu
2007 擭 9 寧 28 擔.
The 34th International Symposium on Compound Semiconductors, iscs2007,
Main Campus, Kyoto University
24)
Theoretical study of AlN decomposition processes in hydrogen atmosphere
U. Panyukova, H. Suzuki, R.Togashi, H. Murakami, Y. Kumagai, A. Koukitu
2007 擭 10 寧 16 擔, TuC P33.
7th Akasaki Research Center Symposium "To the New Horizon of the Nitride Research", Nagoya University Environmental Studies Hall, Nagoya
25)
(Invited) HVPE Growth of AlN, AlGaN and InN
A. Koukitu, Y. Kumagai and H. Murakami
2007 擭 10 寧 19 擔.
Meijo International Symposium on Nitride Semiconductors 2007, Meijo University, Nagoya
26)
(Invited) HVPE of AlN and AlGaN
A. Koukitu, Y. Kumagai and H. Murakami
2007 擭 10 寧 20 擔.
暯惉19擭搙搶杒戝妛揹婥捠怣尋媶強嫟摨僾儘僕僃僋僩尋媶夛丆僷儗僗徏廎丆媨忛導徏搰挰
27)
HVPE朄偵傛傞InN惉挿偲昞柺斀墳儊僇僯僘儉
孎扟媊捈, 銝銙柧攲
2007 擭 10 寧 26 擔.
寢徎岺妛暘壢夛2007擭擭枛島墘夛丂寢徎偐傜奼偑傞壢妛, 妛廗堾戝妛
28)
N嬌惈拏壔僀儞僕僂儉寢徎偺條乆側暤埻婥壓偵偍偗傞暘夝儊僇僯僘儉偺夝柧
晉妦棟宐, 姏壓朁庽, 惣郪梇庽, 懞忋彯, 孎扟媊捈, 銝銙柧攲
2007 擭 12 寧 14 擔, 09.
29)
戞堦尨棟寁嶼偵傛傞悈慺暤埻婥壓偵偍偗傞 GaN(0001)偍傛傃(0001)柺偺暘夝夁掱偺夝愅
楅栘傂偐傝, 晉妦棟宐, 懞忋彯, 孎扟媊捈, 銝銙柧攲
2007 擭 12 寧 14 擔, 21.
30)
Theoretical study of the decomposition of AlN in a hydrogen atmosphere
U. Panyukova, H. Suzuki, R.Togashi, H. Murakami, Y. Kumagai, A. Koukitu
2007 擭 12 寧 14 擔, 22.
31)
僒僼傽僀傾婎斅忋傊偺拏壔傾儖儈僯僂儉惉挿偵偍偗傞拞娫憌摫擖偺岠壥
揷搰弮暯, 媣曐揷桳婭, 塱搰揙, 晉妦棟宐, 懞忋彯, 孎扟媊捈, 崅揷榓嵠, 銝銙柧攲
2007 擭 12 寧 14 擔, 29.
僾儗ISGN-2僔儞億僕僂儉乽枹棃傪愗傝奐偔拏壔暔敿摫懱寢徎乿丆揷挰僉儍儞僷僗僀僲儀乕僔儑儞僙儞僞乕崙嵺夛媍応丆搶嫗
32)
(Invited) HVPE偵傛傞InN惉挿偲昞柺斀墳儊僇僯僘儉
孎扟媊捈, 銝銙柧攲
2007 擭 12 寧 19 擔.
戞55夞墳梡暔棟妛娭學楢崌島墘夛丆擔杮戝妛棟岺妛晹慏嫶僉儍儞僷僗
33)
In situ僌儔償傿儊僩儕僢僋朄偵傛傞NH3暤埻婥壓(0001)C柺僒僼傽僀傾昞柺斀墳儊僇僯僘儉
廐嶳榓攷, 愇堜懽姲丆懞忋彯丆孎扟媊捈丆銝銙柧攲
2007 擭 12 寧 19 擔, 29p-B-4.
