暯惉18擭搙
13th International Conference on Metal Organic Vapor Phase Epitaxy, ICMOVPE-13, Phoenix Seagaia Resort, Miyazaki, Japan
1)
Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD
M. Takeuchi, H. Shimizu, K. Kawasaki, Y. Kumagai, A. Koukitu and Y. Aoyagi
2006 擭 5 寧 23 擔, Tu-A1.3.
2)
MOVPE-like HVPE of AlN using Solid Aluminum Trichloride Source
K. Eriguchi, H. Murakami, U. Panyukova, Y. Kumagai, S. Ohira and A. Koukitu
2006 擭 5 寧 23 擔, Tu-A1.7.
3)
Influences of surface atom arrangement on the growth of InN layers on GaAs (111)A and (111)B surfaces by metalorganic vapor phase epitaxy
Hisashi Murakami, Jun-ichi Torii, Yoshinao Kumagai and Akinori Koukitu
2006 擭 5 寧 26 擔, Fr-A2.4.
First International Symposium on Growth of III-Nitrides, ISGN-1, Linköping, Sweden
4)
High-speed epitaxial growth of AlN above 1200亷 by hydride vapor phase epitaxy
T. Nagashima, M. Harada, H. Yanagi, Y. Kumagai, A. Koukitu and K. Takada
2006 擭 6 寧 5 擔, MoP-07.
5)
Influence of hydrogen coverage on Si(111) substrate on the growth of GaN buffer layer
Y. Matsuo, Y. Kangawa, R. Togashi, K. Kakimoto and A. Koukitu
2006 擭 6 寧 5 擔, MoP-26.
6)
(Invited) Hydride vapor phase epitaxy of InN by the formation of InCl3 using In metal and Cl2
Y. Kumagai, J. Kikuchi, Y. Nishizawa, H. Murakami and A. Koukitu
2006 擭 6 寧 5 擔, MoI-6.
7)
(Invited) Thermodynamic approach to the growth of III-nitrides
Akinori Koukitu, Jun Kikuchi, Hisashi Murakami and Yoshinao Kumagai
2006 擭 6 寧 5 擔, TuI-7.
8)
Growth of AlxGa1-xN ternary alloy by hydride vapor phase epitaxy
T. Yamane, F. Satoh, H. Murakami, Y. Kumagai and A. Koukitu
2006 擭 6 寧 5 擔, WeP-17.
25th Electronic Materials Symposium, EMS-25, Linköping, Sweden
9)
Effect of arsenic desorption on MOVPE-grown InN layers on GaAs (111)A and (111)B surfaces
Hisashi Murakami, Jun-ichi Torii, Yoshinao Kumagai and Akinori Koukitu
2006 擭 7 寧 5 擔, B5.
15th International Conference on Crystal Growth, ICCG-15, Salt Lake City, UT, U.S.A.
10)
Influence of hydrogen input partial pressure on the polarity of InN on GaAs (111)A grown by metalorganic vapor phase epitaxy
Hisashi Murakami, Jun-ichi Torii, Yoshinao Kumagai, Akinori Koukitu
2006 擭 8 寧  13擔, wg 30.
11)
Ab initio calculation of decomposition GaN (0001) and (0001) surfaces
Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
2006 擭 8 寧  14擔, s 09.
12)
In situ Gravimetric Monitoring of Decomposition Rate on the Surface of (10-12) r-plane Sapphire for the High Temperature Growth of non-polar AlN
Kazuhiro Akiyama, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
2006 擭 8 寧  14擔, 1117.
戞67夞墳梡暔棟妛夛妛弍島墘夛, 棫柦娰戝妛傃傢偙丒偔偝偮僉儍儞僷僗
13)
尨椏暘巕惂屼朄偵傛傞僒僼傽僀傾(0001)婎斅忋InN偺HVPE惉挿
惣郪梇庽丆媏抧弫丆懞忋彯, 孎扟媊捈, 銝銙柧攲
2006 擭 8 寧 29 擔, 29a-C-9.
14)
In situ僌儔償傿儊僩儕僢僋朄偵傛傞(0001)c柺僒僼傽僀傾偺昞柺暘夝夁掱偺偦偺応應掕
廐嶳榓攷丆峳栘戱恖丆懞忋彯丆孎扟媊捈丆銝銙柧攲
2006 擭 8 寧 29 擔, 29p-E-3.
15)
GaN 僶僢僼傽憌惉挿偵偍偗傞 Si(111)婎斅昞柺偺悈慺旐暍棪偺塭嬁
徏旜桳棦巕, 姦愳媊桾, 晉妦棟宐, 奰杮峗堦, 銝銙柧攲
2006 擭 8 寧 29 擔, 29a-E-6.
16)
戞堦尨棟寁嶼媦傃X慄媧廂旝嵶峔憿夝愅偵傛傞 GaAs 弶婜婎斅忋敿愨墢惈 GaN 惉挿傪栚巜偟偨 Fe 僪乕僺儞僌儊僇僯僘儉偺夝柧
晉妦棟宐, 嵅摗巎棽, 懞忋彯, 斞尨弴師, 嶳岥峗巌, 孎扟媊捈, 銝銙柧攲
2006 擭 8 寧 29 擔, 29p-E-11.
17)
HVPE朄偵傛傞AlN偺崅壏丒崅懍僄僺僞僉僔儍儖惉挿
塱搰揙丆尨揷妛丆桍桾擵, 孎扟媊捈, 銝銙柧攲丆崅揷榓嵠
2006 擭 8 寧 29 擔, 29p-E-15.
18)
僒僼傽僀傾(0001)婎斅忋傊偺AlN HVPE惉挿偵偍偗傞尨椏嫙媼弴彉偺塭嬁
彫熀孾梍丆尨揷妛丆塱搰揙, 孎扟媊捈, 銝銙柧攲
2006 擭 8 寧 30 擔, 30p-E-1.
4th International Workshop on Bulk Nitride Semiconductors, IWBNS-IV, Okubiwako Makino Prince Hotel, Makino, Shiga, Japan
19)
(Invited) HVPE growth of AlxGa1-xN ternary alloy using AlCl3 and GaCl
A. Koukitu, T. Yamane, F. Satoh, H. Murakami and Y. Kumagai
2006 擭 10 寧 18 擔.
20)
(Invited) Improvement of AlN crystalline quality with high epitaxial growth rate by hydride vapor phase epitaxy
T. Nagashima, M. Harada, A. Hakomori, H. Yanagi, H. Fukuyama, Y. Kumagai, A. Koukitu and K. Takada
2006 擭 10 寧 18 擔.
21)
(Invited) Improvement of crystalline quality for Al- and N-polar AlN layers by modified flow-modulation MOCVD growth
M. Takeuchi, H. Shimizu, R. Kajitani, K. Kawasaki, T. Kinoshita, K. Takada, H. Murakami, Y. Kumagai, A. Koukitu and Y. Aoyagi
2006 擭 10 寧 20 擔.
22)
(Invited) Polarity dependence of AlN {0001} decomposition in flowing H2
Y. Kumagai, K. Akiyama, R. Togashi, H. Murakami, M. Takeuchi, T. Kinoshita, K. Takada,
Y. Aoyagi, A. Kokitu
2006 擭 10 寧 20 擔.
23)
(Invited) RF-MBE growth of 2H-AlN templates by using a mode change MEE on Si(111) for HVPE growth
T. Ohachi, H. Shimomura, N. Yamabe, T. Yamane, Y. Kumagai and A. Koukitu
2006 擭 10 寧 21 擔.
24)
(Invited) Properties of Fe-doped semi-insulating GaN substrates for high-frequency device fabrication
J. A. Freitas, Jr., J. G. Tischler, J-H. Kim, Y. Kumagai and A. Koukitu
2006 擭 10 寧 21 擔.
International Workshop on Nitride Semiconductors 2006, IWN2006, Kyoto International Conference Hall, Kyoto University Katsura Campus, Ritsumeikan University Biwako-Kusatsu Campus
25)
A New System for Growing Thick InN Layers by Hydride Vapor Phase Epitaxy
Jun Kikuchi, Yuuki Nishizawa, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
2006 擭 10 寧  23擔, MoP1-8.
26)
In situ Gravimetric Monitoring of Decomposition Rate on the Surface of (0001) c-plane Sapphire for the High Temperature Growth of AlN
Kazuhiro Akiyama, Takuto Araki, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
2006 擭 10 寧  24擔, TuP1-82.
27)
First-principles calculation and X-ray absorption fine structure analysis of Fe doping mechanism for semi-insulating GaN growth on GaAs substrates
R. Togashi, F. Satoh, H. Murakami, J. Iihara, K.Yamaguchi, Y. Kumagai and A. Kokitu
2006 擭 10 寧  25擔, WeG3-3.
戞36夞寢徎惉挿崙撪夛媍, NCCG-36, 戝嶃戝妛僐儞儀儞僔儑儞僙儞僞乕
28)
GaN(0001)/(0001) 柺偺昞柺嵞峔惉柺偺夝愅
楅栘傂偐傝, 晉妦棟宐, 孎扟媊捈, 銝銙柧攲
2006 擭 11 寧  1擔, 01aC08.
29)
Theoretical investigation of Al desorption process from (0001) AlN surface
U. Panyukova, H.Suzuki, R. Togashi, H. Murakami, Y.Kumagai and A. Koukitu
2006 擭 11 寧  1擔, 01aC09.
30)
HVPE朄傪梡偄偨AlGaN嶰尦崿徎僄僺僞僉僔乕
嵅摗巎棽, 嶳崻婱岲丆廐嶳榓攷丆懞忋彯丆孎扟媊捈丆銝銙柧攲
2006 擭 11 寧  1擔, 01aA11.
31)
GaAs弶婜婎斅忋敿愨墢惈GaN惉挿偵岦偗偨Fe僪乕僺儞僌儊僇僯僘儉偺夝柧
晉妦棟宐, 嵅摗巎棽, 懞忋彯, 斞尨弴師, 嶳岥峗巌, 孎扟媊捈, 銝銙柧攲
2006 擭 11 寧  1擔, 01aA12.
戞54夞墳梡暔棟妛娭學楢崌島墘夛, 惵嶳妛堾戝妛
32)
崅壏H2暤埻婥壓偵偍偗傞{0001}AlN 暘夝偺柺嬌惈埶懚惈
廐嶳榓攷, 孎扟媊捈, 晲撪摴堦, 懞忋彯, 晉妦棟宐, 栘壓嫓, 崅揷榓嵠, 惵桍崕怣, 銝銙柧攲
2007 擭 3 寧 27 擔, 27a-ZM-5.
33)
3C-SiC/Si僥儞僾儗乕僩忋傊偺AlN偺HVPE惉挿
峕棦岥寬堦, 嶳崻婱岲丆懞忋彯丆孎扟媊捈丆彫媨嶳弮丆銝銙柧攲
2007 擭 3 寧 27 擔, 27a-ZM-9.
34)
GaN帺棫婎斅忋傊偺AlGaN偺HVPE惉挿
嵅摗巎棽, 嶳崻婱岲丆廐嶳榓攷丆懞忋彯丆孎扟媊捈丆銝銙柧攲
2007 擭 3 寧 27 擔, 27p-ZM-6.