暯惉17擭搙
24th Electronic Materials Symposium, EMS-24, Mielparque Matsuyama, Dogo-Himeduka
1)
MOVPE growth of GaN buffer layer directly on Si substrate
A. Koukitu, K. Takemoto, Y. Matsuo, T. Iwamoto, Y. Kangawa and Y. Kumagai
2005
擭
7
寧
5
擔, K3.
2)
Thermodynamic study on hydride vapor phase epitaxy of AlxGa1-xN
H. Murakami, J. Kikuchi, Y. Kumagai and A. Koukitu
2005 擭 7 寧 5 擔, N8.
戞35夞寢徎惉挿崙撪夛媍, NCCG-35, 峀搰戝妛搶峀搰僉儍儞僷僗
3)
AlCl3屌懱尨椏傪梡偄偨AlN惉挿
峕棦岥寬堦, 愇堜寬堦丆懞忋彯丆孎扟媊捈丆銝銙柧攲丆戝暯廳抝
2005 擭 8 寧 17 擔, 17pB02.
4)
僴儔僀僪婥憡惉挿朄偵傛傞AlxGa1-xN惉挿偺擬椡妛夝愅丂亅僉儍儕傾僈僗拞悈慺暘埑偺塭嬁亅
懞忋彯, 媏抧弫丆孎扟媊捈丆銝銙柧攲
2005 擭 8 寧 17 擔, 17pB04.
5)
擇惉暘姰慡屌梟懱寢徎偺幚岠暘攝學悢偺惉挿忦審埶懚
徏杮婌埲巕, 擖郪庻旤丆杒懞夒晇丆墶嶳墄榊丆孎扟媊捈丆銝銙柧攲
2005
擭
8
寧
17
擔, 17pC12.
6th International Conference on Nitride Semiconductors, ICNS-6, Congress Center Bremen, Bremen, Germany
6)
Thermodynamic study on the role of hydrogen during hydride vapor phase epitaxy of
AlxGa1-xN
H. Murakami, J. Kikuchi, Y. Kumagai and A. Koukitu
2005 擭 8 寧 29 擔, Mo-P-133.
7)
Thermodynamics on Hydride Vapor Phase Epitaxy of AlN Using AlCl
3 and NH
3
Y. Kumagai, K. Takemoto, J. Kikuchi, T. Hasegawa, H. Murakami and A. Koukitu
2005
擭
8
寧
30
擔, Tu-G3-5.
戞66夞墳梡暔棟妛夛妛弍島墘夛, 摽搰戝妛忢嶰搰僉儍儞僷僗
8)
Al尨椏斀墳晹傪敽傢側偄怴偟偄AlN-HVPE惉挿
峕棦岥寬堦, 愇堜寬堦丆懞忋彯丆孎扟媊捈丆銝銙柧攲丆戝暯廳抝
2005
擭
9
寧
8
擔, 8a-X-14.
9)
DEEP朄偵傛傞GaN寢徎
尦栘寬嶌, 壀媣戱巌丆徏杮捈庽丆妢堜恗丆拞敤惉擇丆忋徏峃擇丆孎扟媊捈丆銝銙柧攲丆娭氭
2005
擭
9
寧
10
擔, 10a-X-6.
搶杒戝妛妛嵺僙儞僞乕尋媶夛, 乽拏壔暔扨寢徎婎斅媄弍偺怴偨側揥奐乿丆愬戜
10)
(Invited) 僴僀僪儔僀僪婥憡惉挿朄偵傛傞GaN, AlN媅帡僶儖僋寢徎偺嶌惢
孎扟媊捈
2006
擭
1
寧
13
擔.
戞53夞墳梡暔棟妛娭學楢崌島墘夛丆晲憼岺嬈戝妛
11)
Si婎斅忋掅壏GaN僶僢僼傽憌惉挿偵偍偗傞悈慺僉儍儕傾僈僗偺塭嬁
懞忋彯丆娾杮抭峴丆揷搰弮暯丆徏旜桳棦巕丆姦愳媊桾丆孎扟媊捈丆銝銙柧攲
2006
擭
3
寧
22
擔, 22a-ZF-9.
12)
GaAs傪弶婜婎斅偵梡偄偨HVPE惉挿偵傛傞Fe僪乕僾敿愨墢惈GaN婎斅偺嶌惢
孎扟媊捈丆抾杮媏榊丆懞忋彯丆銝銙柧攲
2006
擭
3
寧
25
擔, 25p-ZE-6.
13)
AlGaN嶰尦崿徎岤枌僄僺僞僉僔乕傪栚巜偟偨HVPE惉挿
嶳崻婱岲丆廐嶳榓攷丆嵅摗巎棽丆懞忋彯丆孎扟媊捈丆銝銙柧攲
2006
擭
3
寧
25
擔, 25p-ZE-17.
