暯惉16擭搙
12th International Conference on Metal Organic Vapor Phase Epitaxy, ICMOVPE-12, Westin Maui Hotel, Lahaina, Maui, HI, U.S.A.
1)
Influence of Laser Power on Crystalline Quality of InGaN with High Indium Content Grown by Pulse Laser Assisted MOVPE
Yoshihiro Kangawa, Ken-nosuke Hida, Yoshinao Kumagai, Akinori Koukitu, Norihito Kawaguchi
2004 擭 5 寧 31 擔.
2)
Thermodynamic Analysis of InN and In
xGa
1-xN MOVPE Using Various Nitrogen Sources
Yoshinao Kumagai, Jun Kikuchi, Yuriko Matsuo, Yoshihiro Kangawa, Ken Tanaka, Akinori Koukitu
2004
擭
6
寧
3
擔.
23rd Electronic Materials Symposium, EMS-23, Hotel Sunvalley Fujimi, Izu-Nagaoka
3)
High Fe doping during thick GaN layer growth on sapphire (0001)
H. Murakami, M. Harada, Y. Kangawa, Y. Kumagai and A. Koukitu
2004 擭 7 寧 9 擔, E9.
4)
Thermodynamic Analyses of the MOVPE Growth of Indium Containing Nitrides Using Various Nitrogen Sources
Jun Kikuchi, Yuriko Matsuo, Yoshihiro Kangawa, Yoshinao Kumagai and Akinori Koukitu
2004 擭 7 寧 9 擔, E15.
5)
Hydride Vapor Phase Epitaxy of Thick AlN Layer on Sapphire (0001) Substrate
T. Yamane, H. Shikauchi, H. Murakami, Y. Kangawa, Y. Kumagai and A. Koukitu
2004 擭 7 寧 9 擔, F2.
International Workshop on Nitride Semiconductors, IWN2004, Sheraton Station Square, Pittsburgh, PA, U.S.A.
6)
Growth and Characterization of Thick GaN Layers with High Fe Doping
Yoshinao Kumagai, Hisashi Murakami, Yoshihiro Kangawa and Akinori Koukitu
2004 擭 7 寧 22 擔, B14.2.
7)
Growth of Thick AlN Layer on Sapphire (0001) Substrate Using Hydride Vapor Phase Epitaxy
Takayoshi Yamane, Hisashi Murakami, Yoshihiro Kangawa, Yoshinao Kumagai and Akinori Koukitu
2004 擭 7 寧 22 擔, B15.4
14th International Conference on Crystal Growth, ICCG-14, Alpes Congres, Grenoble, France
8)
GaN growth process using GaP(111)A and (111)B surfaces as an initial substrate
Yuriko Matsuo, Nobuhiko Kawaguchi, Marie Fujino, Yoshihiro Kangawa, Yoshinao Kumagai, Toshiharu Irisawa, Akinori Koukitu
2004 擭 8 寧 9 擔, 0839.
9)
Impact of crystallization manner of buffer layer on the crystalline quality of GaN epitaxial layer on GaAs (111)
Hisashi Murakami, Nobuhiko Kawaguchi, Yoshihiro Kangawa, Yoshinao Kumagai and Akinori Koukitu
2004 擭 8 寧 10 擔, 0827.
戞34夞寢徎惉挿崙撪夛媍, NCCG-34, 搶嫗擾岺戝妛彫嬥堜僉儍儞僷僗
10)
昞柺岝媧廂朄偵傛傞GaAs(111)A柺偐傜偺As扙棧夁掱偺偦偺応娤嶡
娾杮抭峴, 栰娫偐偍傝丆徏旜桳棦巕丆姦愳媊桾丆孎扟媊捈丆銝銙柧攲
2004 擭 8 寧 25 擔, 25aC03.
11)
II-IV-V2懓帴惈敿摫懱敄枌偺MBE惉挿偵岦偗偨棟榑専摙
姦愳媊桾, 愇嫶棽岾丆孎扟媊捈丆銝銙柧攲丆嵅摗彑徍
2004 擭 8 寧 26 擔, 26aC03.
12)
姰慡屌梟懱偵偍偗傞幚岠暘攝學悢偺寢崌僄僱儖僊乕埶懚惈
徏杮婌埲巕, 擖郪庻旤丆杒懞夒晇丆墶嶳墄榊丆孎扟媊捈丆銝銙柧攲
2004 擭 8 寧 26 擔, 26aC07.
13)
GaN/GaP 僿僥儘惉挿偲婎斅柺曽埵
摗栰恀棟宐, 晉妦棟宐, 徏旜桳棦巕, 姦愳媊桾, 孎扟媊捈, 擖郪庻旤, 銝銙柧攲
2004 擭 8 寧 27 擔, 27aB01.
14)
戞堦尨棟寁嶼偵傛傞In宯拏壔暔尨椏偺擬椡妛僨乕僞
徏旜桳棦巕, 揷拞寬丆姦愳媊桾丆孎扟媊捈丆銝銙柧攲
2004 擭 8 寧 27 擔, 27aB02.
15)
條乆側拏慺尮傪梡偄偨MOVPE朄偵傛傞InN偍傛傃InGaN偺惉挿偺擬椡妛夝愅
媏抧弫, 徏旜桳棦巕丆姦愳媊桾丆揷拞寬丆孎扟媊捈丆銝銙柧攲
2004 擭 8 寧 27 擔, 27aB03.
16)
InGaN岝椼婲MOVPE偵偍偗傞敄枌暔惈偺岝嫮搙埶懚惈
姦愳媊桾, 壨岥婭恗丆壀揷埨巎丆孎扟媊捈丆銝銙柧攲
2004 擭 8 寧 27 擔, 27aB06.
戞65夞墳梡暔棟妛夛妛弍島墘夛, 搶杒妛堾戝妛愹僉儍儞僷僗
17)
條乆側拏慺尮傪梡偄偨In宯拏壔暔MOVPE惉挿偺擬椡妛夝愅
媏抧弫, 徏旜桳棦巕丆姦愳媊桾丆揷拞寬丆孎扟媊捈丆銝銙柧攲
2004 擭 9 寧 1 擔, 1a-T-4.
International Workshop on Bulk Nitride Semiconductors III, IWBNS-III, Hotel Skalny, Zakopane, Poland
18)
(Invited) Thermodynamic analysis of AlGaN HVPE growth
A. Koukitu, J. Kikuchi and Y. Kumagai
2004 擭 9 寧 6 擔.
19)
(Invited) Growth of thick AlN by hydride vapor phase epitaxy
Yoshinao Kumagai, Takayoshi Yamane and Akinori Koukitu
2004 擭 9 寧 7 擔.
揹巕忣曬捠怣妛夛媄弍尋媶曬崘乲揹巕僨僶僀僗乴, 嫗搒戝妛媑揷僉儍儞僷僗
20)
僴僀僪儔僀僪婥憡惉挿朄偵傛傞Al宯拏壔暔偺崅懍惉挿丂亅AlN偺崅懍惉挿偼壜擻偐丠亅
孎扟媊捈, 銝銙柧攲
2004 擭 10 寧 21 擔, ED2004-121.
墳梡暔棟妛夛墳梡揹巕暔惈暘壢夛尋媶椺夛, 乽拏壔傾儖儈僯僂儉丂亅寢徎丒僾儘僙僗丒僨僶僀僗偺嵟慜慄亅乿丆婡夿怳嫽夛娰丆搶嫗
21)
(Invited) HVPE偵傛傞AlN惉挿
銝銙柧攲, 孎扟媊捈
2004 擭 10 寧 29 擔.
戞52夞墳梡暔棟妛娭學楢崌島墘夛, 嶉嬍戝妛
22)
僒僼傽僀傾偍傛傃GaAs婎斅忋傊偺Fe僪乕僾GaN岤枌惉挿
孎扟媊捈, 懞忋彯丆銝銙柧攲
2005 擭 3 寧 30 擔, 30a-L-21.
23)
AlGaN嶰尦崿徎偺HVPE惉挿偼壜擻偐丠
抾杮媏榊, 嶳崻婱岲丆媏抧弫丆孎扟媊捈丆銝銙柧攲
2005 擭 3 寧 30 擔, 30a-L-27.
24)
AlN偺HVPE惉挿偺擬椡妛夝愅
媏抧弫, 孎扟媊捈丆銝銙柧攲
2005 擭 3 寧 30 擔, 30a-L-28.
25)
MOVPE AlN/sapphire僥儞僾儗乕僩忋傊偺AlN偺HVPE惉挿
孎扟媊捈, 幁撪梞巙丆塱搰揙丆銝銙柧攲丆晲撪摴堦丆栘壓嫓丆愳嶈岹帯丆惵桍崕怣丆崅揷榓嵠
2005 擭 3 寧 30 擔, 30p-L-14.
26)
GaN僶僢僼傽乕憌傪梡偄偨GaN/Si(111)偺MOVPE惉挿
徏旜桳棦巕, 姦愳媊桾丆娾杮抭峴丆栰娫偐偍傝丆孎扟媊捈丆銝銙柧攲
2005 擭 3 寧 31 擔, 31a-L-2.
